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Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

Transistors

Records 64,903
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Part Number
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In Stock
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ZXMN10A08DN8TC
ZXMN10A08DN8TC

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 100V 1.6A 8SOIC

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A
  • Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 50V
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
In Stock2,754
ZXMN2088DE6TA
ZXMN2088DE6TA

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 1.7A SOT-26

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A
  • Rds On (Max) @ Id, Vgs: 200mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 279pF @ 10V
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
In Stock4,050
ZXMN2A04DN8TA
ZXMN2A04DN8TA

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 5.9A 8-SOIC

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.9A
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 5.9A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 22.1nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 10V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock4,536
ZXMN2A04DN8TC
ZXMN2A04DN8TC

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 5.9A 8SOIC

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.9A
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 5.9A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 22.1nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 10V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock7,254
ZXMN2AM832TA
ZXMN2AM832TA

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 2.9A 8MLP

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A
  • Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 299pF @ 15V
  • Power - Max: 1.7W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-MLP (3x2)
In Stock29,004
ZXMN2AMCTA
ZXMN2AMCTA

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 2.9A DFN

  • Manufacturer: Diodes Incorporated
  • Series: Automotive, AEC-Q101
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
  • Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 299pF @ 15V
  • Power - Max: 1.7W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: W-DFN3020-8
In Stock7,110
ZXMN3A04DN8TA
ZXMN3A04DN8TA

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 6.5A 8-SOIC

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 12.6A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 36.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V
  • Power - Max: 1.81W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock13,350
ZXMN3A04DN8TC
ZXMN3A04DN8TC

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 6.5A 8SOIC

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 12.6A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 36.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V
  • Power - Max: 1.81W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock8,352
ZXMN3A06DN8TA
ZXMN3A06DN8TA

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 4.9A 8-SOIC

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock12,462
ZXMN3A06DN8TC
ZXMN3A06DN8TC

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 4.9A 8SOIC

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock2,880
ZXMN3A06N8TA
ZXMN3A06N8TA

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 8SOIC

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
In Stock6,804
ZXMN3AM832TA
ZXMN3AM832TA

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 2.9A 8MLP

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A
  • Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
  • Power - Max: 1.13W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-MLP (3x2)
In Stock2,070
ZXMN3AMCTA
ZXMN3AMCTA

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 2.9A DFN

  • Manufacturer: Diodes Incorporated
  • Series: Automotive, AEC-Q101
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
  • Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
  • Power - Max: 1.7W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: W-DFN3020-8
In Stock8,262
ZXMN3F31DN8TA
ZXMN3F31DN8TA

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 5.7A 8SOIC

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock18,168
ZXMN3G32DN8TA
ZXMN3G32DN8TA

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 5.5A 8SOIC

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 472pF @ 15V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock28,422
ZXMN6A09DN8TA
ZXMN6A09DN8TA

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V 4.3A 8-SOIC

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1407pF @ 40V
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock15,234
ZXMN6A09DN8TC
ZXMN6A09DN8TC

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V 4.3A 8SOIC

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1407pF @ 40V
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
In Stock5,580
ZXMN6A11DN8TA
ZXMN6A11DN8TA

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V 2.5A 8-SOIC

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A
  • Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 40V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock35,034
ZXMN6A11DN8TC
ZXMN6A11DN8TC

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V 2.5A 8SOIC

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A
  • Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 40V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock8,352
ZXMN6A25DN8TA
ZXMN6A25DN8TA

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V 3.8A 8-SOIC

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock16,944
ZXMP3A16DN8TA
ZXMP3A16DN8TA

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 30V 4.2A 8-SOIC

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.2A
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 29.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1022pF @ 15V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
In Stock5,130
ZXMP3A17DN8TA
ZXMP3A17DN8TA

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 30V 3.4A 8-SOIC

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
  • Rds On (Max) @ Id, Vgs: 70mOhm @ 3.2A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.28nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V
  • Power - Max: 2.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock3,258
ZXMP3F37DN8TA
ZXMP3F37DN8TA

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 30V 5.7A 8SO

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1678pF @ 15V
  • Power - Max: 1.81W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock7,074
ZXMP6A16DN8QTA
ZXMP6A16DN8QTA

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 60V 2.9A 8-SOIC

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V
  • Power - Max: 1.81W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock4,572
ZXMP6A16DN8TA
ZXMP6A16DN8TA

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 60V 2.9A 8-SOIC

  • Manufacturer: Diodes Incorporated
  • Series: Automotive, AEC-Q101
  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.1nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V
  • Power - Max: 2.15W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock2,124
ZXMP6A16DN8TC
ZXMP6A16DN8TC

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 60V 2.9A 8-SOIC

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock3,490
ZXMP6A17DN8TA
ZXMP6A17DN8TA

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 60V 2.7A 8-SOIC

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A
  • Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V
  • Power - Max: 1.81W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock13,890
ZXMP6A18DN8TA
ZXMP6A18DN8TA

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 60V 3.7A 8-SOIC

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 30V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock33,366
150-101N09A-00
150-101N09A-00

IXYS-RF

Transistors - FETs, MOSFETs - RF

RF MOSFET N-CHANNEL DE150

  • Manufacturer: IXYS-RF
  • Series: DE
  • Transistor Type: N-Channel
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating (Amps): 9A
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 200W
  • Voltage - Rated: 100V
  • Package / Case: 6-SMD, Flat Lead Exposed Pad
  • Supplier Device Package: DE150
In Stock7,974
150-102N02A-00
150-102N02A-00

IXYS-RF

Transistors - FETs, MOSFETs - RF

RF MOSFET N-CHANNEL DE150

  • Manufacturer: IXYS-RF
  • Series: DE
  • Transistor Type: N-Channel
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating (Amps): 2A
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 200W
  • Voltage - Rated: 1000V
  • Package / Case: 6-SMD, Flat Lead Exposed Pad
  • Supplier Device Package: DE150
In Stock9,180