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Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

Transistors

Records 64,903
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Part Number
Description
In Stock
Quantity
VQ1006P-2
VQ1006P-2

Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 4N-CH 90V 0.4A 14DIP

  • Manufacturer: Vishay Siliconix
  • Series: -
  • FET Type: 4 N-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 90V
  • Current - Continuous Drain (Id) @ 25°C: 400mA
  • Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: -
  • Supplier Device Package: 14-DIP
In Stock5,508
VQ1006P-E3
VQ1006P-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 4N-CH 90V 0.4A 14DIP

  • Manufacturer: Vishay Siliconix
  • Series: -
  • FET Type: 4 N-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 90V
  • Current - Continuous Drain (Id) @ 25°C: 400mA
  • Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: -
  • Supplier Device Package: 14-DIP
In Stock6,768
VQ2001P
VQ2001P

Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 4P-CH 30V 0.6A 14DIP

  • Manufacturer: Vishay Siliconix
  • Series: -
  • FET Type: 4 P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 600mA
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 12V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
In Stock5,760
VQ2001P-2
VQ2001P-2

Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 4P-CH 30V 0.6A 14DIP

  • Manufacturer: Vishay Siliconix
  • Series: -
  • FET Type: 4 P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 600mA
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 12V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP
  • Supplier Device Package: 14-DIP
In Stock5,634
VQ3001P-E3
VQ3001P-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N/2P-CH 30V 14DIP

  • Manufacturer: Vishay Siliconix
  • Series: -
  • FET Type: 2 N and 2 P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 850mA, 600mA
  • Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 12V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
In Stock5,940
VT6J1T2CR
VT6J1T2CR

Rohm Semiconductor

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 20V 0.1A VMT6

  • Manufacturer: Rohm Semiconductor
  • Series: -
  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate, 1.2V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 3.8Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V
  • Power - Max: 120mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: VMT6
In Stock63,990
VT6K1T2CR
VT6K1T2CR

Rohm Semiconductor

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 0.1A VMT6

  • Manufacturer: Rohm Semiconductor
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 1.2V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 3.5Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 7.1pF @ 10V
  • Power - Max: 120mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: VMT6
In Stock3,330
VT6M1T2CR
VT6M1T2CR

Rohm Semiconductor

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 20V 0.1A VMT6

  • Manufacturer: Rohm Semiconductor
  • Series: -
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate, 1.2V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 3.5Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 7.1pF @ 10V
  • Power - Max: 120mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: VMT6
In Stock148,140
VWM200-01P
VWM200-01P

IXYS

Transistors - FETs, MOSFETs - Arrays

MOSFET 6N-CH 100V 210A V2

  • Manufacturer: IXYS
  • Series: -
  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 210A
  • Rds On (Max) @ Id, Vgs: 5.2mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 430nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: V2-PAK
  • Supplier Device Package: V2-PAK
In Stock2,664
VWM270-0075X2

Transistors - FETs, MOSFETs - Arrays

MOSFET 6N-CH 75V 270A V2-PAK

  • Manufacturer: IXYS
  • Series: -
  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 270A
  • Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: V2-PAK
  • Supplier Device Package: V2-PAK
In Stock7,038
VWM350-0075P

Transistors - FETs, MOSFETs - Arrays

MOSFET 6N-CH 75V 340A V2

  • Manufacturer: IXYS
  • Series: -
  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 340A
  • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 250A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 450nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: V2-PAK
  • Supplier Device Package: V2-PAK
In Stock5,076
XN0187200L
XN0187200L

Panasonic Electronic Components

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 50V 0.1A MINI-5

  • Manufacturer: Panasonic Electronic Components
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 50Ohm @ 20mA, 5V
  • Vgs(th) (Max) @ Id: 3.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V
  • Power - Max: 300mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: Mini5-G1
In Stock7,704
XP0187800L
XP0187800L

Panasonic Electronic Components

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 50V .1A S MINI-5P

  • Manufacturer: Panasonic Electronic Components
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: SMini5-G1
In Stock6,588
XP0487800L
XP0487800L

Panasonic Electronic Components

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 50V 0.1A S-MINI-6P

  • Manufacturer: Panasonic Electronic Components
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SMINI6-G1
In Stock6,534
ZDM4206NTA
ZDM4206NTA

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V 1A SOT-223-8

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 1A
  • Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V
  • Power - Max: 2.75W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-223-8
  • Supplier Device Package: SOT-223
In Stock3,870
ZDM4206NTC
ZDM4206NTC

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V 1A SOT-223-8

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 1A
  • Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V
  • Power - Max: 2.75W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-223-8
  • Supplier Device Package: SOT-223
In Stock6,426
ZDM4306NTA
ZDM4306NTA

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V 2A SOT-223-8

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2A
  • Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Power - Max: 3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-223-8
  • Supplier Device Package: SM8
In Stock6,534
ZDM4306NTC
ZDM4306NTC

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V 2A SOT-223-8

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2A
  • Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Power - Max: 3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-223-8
  • Supplier Device Package: SOT-223
In Stock4,158
ZVN4206NTA
ZVN4206NTA

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V SOT-223-8

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SOT-223-8
  • Supplier Device Package: SOT-223
In Stock6,894
ZVN4206NTC
ZVN4206NTC

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V SOT-223-8

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SOT-223-8
  • Supplier Device Package: SOT-223
In Stock3,490
ZXMC10A816N8TC
ZXMC10A816N8TC

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 100V 2A 8-SOIC

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2A
  • Rds On (Max) @ Id, Vgs: 230mOhm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 497pF @ 50V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
In Stock24,648
ZXMC3A16DN8TA
ZXMC3A16DN8TA

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 30V 8SOIC

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A, 4.1A
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock19,596
ZXMC3A16DN8TC
ZXMC3A16DN8TC

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 30V 8SOIC

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A, 4.1A
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock4,140
ZXMC3A17DN8TA
ZXMC3A17DN8TA

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 30V 8SOIC

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A, 3.4A
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 7.8A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock26,952
ZXMC3A17DN8TC
ZXMC3A17DN8TC

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 30V 8SOIC

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A, 3.4A
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 7.8A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock6,318
ZXMC3A18DN8TA
ZXMC3A18DN8TA

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 30V 8-SOIC

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.8A
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 5.8A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
In Stock7,506
ZXMC3AM832TA
ZXMC3AM832TA

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 30V 2.9A/2.1A 8MLP

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
  • Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
  • Power - Max: 1.7W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-MLP (3x3)
In Stock12,936
ZXMC3AMCTA
ZXMC3AMCTA

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 30V 2.9A/2.1A 8DFN

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
  • Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
  • Power - Max: 1.7W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-DFN (3x2)
In Stock1,780
ZXMC3F31DN8TA
ZXMC3F31DN8TA

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 30V 6.8A/4.9A 8SO

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.9A
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock16,632
ZXMC4559DN8TA
ZXMC4559DN8TA

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 60V 8SOIC

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A, 2.6A
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock17,100