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ZXMN6A11DN8TC

ZXMN6A11DN8TC

For Reference Only

Part Number ZXMN6A11DN8TC
PNEDA Part # ZXMN6A11DN8TC
Description MOSFET 2N-CH 60V 2.5A 8SOIC
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 8,352
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

ZXMN6A11DN8TC Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberZXMN6A11DN8TC
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
ZXMN6A11DN8TC, ZXMN6A11DN8TC Datasheet (Total Pages: 8, Size: 649.62 KB)
PDFZXMN6A11DN8TC Datasheet Cover
ZXMN6A11DN8TC Datasheet Page 2 ZXMN6A11DN8TC Datasheet Page 3 ZXMN6A11DN8TC Datasheet Page 4 ZXMN6A11DN8TC Datasheet Page 5 ZXMN6A11DN8TC Datasheet Page 6 ZXMN6A11DN8TC Datasheet Page 7 ZXMN6A11DN8TC Datasheet Page 8

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ZXMN6A11DN8TC Specifications

ManufacturerDiodes Incorporated
Series-
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C2.5A
Rds On (Max) @ Id, Vgs120mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs5.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds330pF @ 40V
Power - Max1.8W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

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Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Rds On (Max) @ Id, Vgs

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Gate Charge (Qg) (Max) @ Vgs

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