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ZXMN2A04DN8TA

ZXMN2A04DN8TA

For Reference Only

Part Number ZXMN2A04DN8TA
PNEDA Part # ZXMN2A04DN8TA
Description MOSFET 2N-CH 20V 5.9A 8-SOIC
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 4,536
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

ZXMN2A04DN8TA Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberZXMN2A04DN8TA
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
ZXMN2A04DN8TA, ZXMN2A04DN8TA Datasheet (Total Pages: 7, Size: 179.46 KB)
PDFZXMN2A04DN8TC Datasheet Cover
ZXMN2A04DN8TC Datasheet Page 2 ZXMN2A04DN8TC Datasheet Page 3 ZXMN2A04DN8TC Datasheet Page 4 ZXMN2A04DN8TC Datasheet Page 5 ZXMN2A04DN8TC Datasheet Page 6 ZXMN2A04DN8TC Datasheet Page 7

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ZXMN2A04DN8TA Specifications

ManufacturerDiodes Incorporated
Series-
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C5.9A
Rds On (Max) @ Id, Vgs25mOhm @ 5.9A, 4.5V
Vgs(th) (Max) @ Id700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs22.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds1880pF @ 10V
Power - Max1.8W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

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Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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FET Type

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FET Feature

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Package / Case

8-TSSOP (0.173", 4.40mm Width)

Supplier Device Package

8-TSSOP

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