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Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

Transistors

Records 64,903
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Part Number
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In Stock
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PMDT290UNE,115
PMDT290UNE,115

Nexperia

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 0.8A SOT666

  • Manufacturer: Nexperia USA Inc.
  • Series: Automotive, AEC-Q101, TrenchMOS™
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 800mA
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
In Stock189,366
PMDT290UNEYL
PMDT290UNEYL

Nexperia

Transistors - FETs, MOSFETs - Arrays

PMDT290UNE/SOT666/SOT6

  • Manufacturer: Nexperia USA Inc.
  • Series: Automotive, AEC-Q101
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
In Stock6,408
PMDT670UPE,115
PMDT670UPE,115

Nexperia

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 20V 0.55A SOT666

  • Manufacturer: Nexperia USA Inc.
  • Series: Automotive, AEC-Q101, TrenchMOS™
  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 550mA
  • Rds On (Max) @ Id, Vgs: 850mOhm @ 400mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 10V
  • Power - Max: 330mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
In Stock145,830
PMDXB1200UPEZ
PMDXB1200UPEZ

Nexperia

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 30V 0.41A 6DFN

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 410mA
  • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 410mA, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 43.2pF @ 15V
  • Power - Max: 285mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN Exposed Pad
  • Supplier Device Package: DFN1010B-6
In Stock105,240
PMDXB550UNEZ
PMDXB550UNEZ

Nexperia

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 0.59A 6DFN

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 590mA
  • Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V
  • Power - Max: 285mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN Exposed Pad
  • Supplier Device Package: DFN1010B-6
In Stock8,118
PMDXB600UNELZ
PMDXB600UNELZ

Nexperia

Transistors - FETs, MOSFETs - Arrays

20 V, DUAL N-CHANNEL TRENCH MOSF

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 600mA
  • Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V
  • Power - Max: 380mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN Exposed Pad
  • Supplier Device Package: DFN1010B-6
In Stock3,454
PMDXB600UNEZ
PMDXB600UNEZ

Nexperia

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 0.6A 6DFN

  • Manufacturer: Nexperia USA Inc.
  • Series: TrenchFET®
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 600mA
  • Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V
  • Power - Max: 265mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN Exposed Pad
  • Supplier Device Package: DFN1010B-6
In Stock153,000
PMDXB950UPELZ
PMDXB950UPELZ

Nexperia

Transistors - FETs, MOSFETs - Arrays

20 V, DUAL P-CHANNEL TRENCH MOSF

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 500mA
  • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
  • Power - Max: 380mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN Exposed Pad
  • Supplier Device Package: DFN1010B-6
In Stock48,132
PMDXB950UPEZ
PMDXB950UPEZ

Nexperia

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 20V 0.5A 6DFN

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 500mA
  • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
  • Power - Max: 265mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN Exposed Pad
  • Supplier Device Package: DFN1010B-6
In Stock3,582
PMGD130UN,115

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 1.2A 6TSSOP

  • Manufacturer: NXP USA Inc.
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.2A
  • Rds On (Max) @ Id, Vgs: 145mOhm @ 1.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
  • Power - Max: 390mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
In Stock6,120
PMGD175XN,115

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 0.9A 6TSSOP

  • Manufacturer: NXP USA Inc.
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 900mA
  • Rds On (Max) @ Id, Vgs: 225mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 15V
  • Power - Max: 390mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
In Stock5,976
PMGD175XNEAX
PMGD175XNEAX

Nexperia

Transistors - FETs, MOSFETs - Arrays

MOSFET 2 N-CH 30V 900MA SOT363

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
  • Rds On (Max) @ Id, Vgs: 252mOhm @ 900mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.65nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 81pF @ 15V
  • Power - Max: 390mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
In Stock8,640
PMGD175XNEX
PMGD175XNEX

Nexperia

Transistors - FETs, MOSFETs - Arrays

MOSFET 2 N-CH 30V 870MA 6TSSOP

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
  • Rds On (Max) @ Id, Vgs: 252mOhm @ 900mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.65nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 81pF @ 15V
  • Power - Max: 260mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
In Stock225,348
PMGD280UN,115
PMGD280UN,115

Nexperia

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 0.87A 6TSSOP

  • Manufacturer: Nexperia USA Inc.
  • Series: TrenchMOS™
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 870mA
  • Rds On (Max) @ Id, Vgs: 340mOhm @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.89nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 20V
  • Power - Max: 400mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
In Stock57,954
PMGD290UCEAX
PMGD290UCEAX

Nexperia

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 20V 6TSSOP

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 725mA, 500mA
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
  • Power - Max: 280mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
In Stock2,196
PMGD290XN,115
PMGD290XN,115

Nexperia

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 0.86A 6TSSOP

  • Manufacturer: Nexperia USA Inc.
  • Series: TrenchMOS™
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 860mA
  • Rds On (Max) @ Id, Vgs: 350mOhm @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 20V
  • Power - Max: 410mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
In Stock1,393,986
PMGD370XN,115
PMGD370XN,115

Nexperia

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 0.74A 6TSSOP

  • Manufacturer: Nexperia USA Inc.
  • Series: TrenchMOS™
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 740mA
  • Rds On (Max) @ Id, Vgs: 440mOhm @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.65nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
  • Power - Max: 410mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
In Stock5,418
PMGD400UN,115

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 0.71A 6TSSOP

  • Manufacturer: NXP USA Inc.
  • Series: TrenchMOS™
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 710mA
  • Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.89nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 25V
  • Power - Max: 410mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
In Stock4,680
PMGD780SN,115
PMGD780SN,115

Nexperia

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V 0.49A 6TSSOP

  • Manufacturer: Nexperia USA Inc.
  • Series: TrenchMOS™
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 490mA
  • Rds On (Max) @ Id, Vgs: 920mOhm @ 300mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 30V
  • Power - Max: 410mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
In Stock108,426
PMGD8000LN,115

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 0.125A 6TSSOP

  • Manufacturer: NXP USA Inc.
  • Series: TrenchMOS™
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 125mA
  • Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 5V
  • Power - Max: 200mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
In Stock5,634
PMWD15UN,518

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 11.6A 8TSSOP

  • Manufacturer: NXP USA Inc.
  • Series: TrenchMOS™
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 11.6A
  • Rds On (Max) @ Id, Vgs: 18.5mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 16V
  • Power - Max: 4.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
In Stock3,024
PMWD16UN,518

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 9.9A 8TSSOP

  • Manufacturer: NXP USA Inc.
  • Series: TrenchMOS™
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 9.9A
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 3.5A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 23.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1366pF @ 16V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
In Stock7,902
PMWD19UN,518

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 5.6A 8TSSOP

  • Manufacturer: NXP USA Inc.
  • Series: TrenchMOS™
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.6A
  • Rds On (Max) @ Id, Vgs: 23mOhm @ 3.5A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1478pF @ 10V
  • Power - Max: 2.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
In Stock4,176
PMWD20XN,118

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 10.4A 8TSSOP

  • Manufacturer: NXP USA Inc.
  • Series: TrenchMOS™
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 10.4A
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 4.2A, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 16V
  • Power - Max: 4.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
In Stock6,282
PMWD26UN,518

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 7.8A 8TSSOP

  • Manufacturer: NXP USA Inc.
  • Series: TrenchMOS™
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.8A
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 3.5A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 23.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1366pF @ 16V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
In Stock4,176
PMWD30UN,518

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 5A 8TSSOP

  • Manufacturer: NXP USA Inc.
  • Series: TrenchMOS™
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 33mOhm @ 3.5A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1478pF @ 10V
  • Power - Max: 2.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
In Stock6,192
QH8JA1TCR
QH8JA1TCR

Rohm Semiconductor

Transistors - FETs, MOSFETs - Arrays

20V PCH+PCH MIDDLE POWER MOSFET,

  • Manufacturer: Rohm Semiconductor
  • Series: -
  • FET Type: 2 P-Channel (Dual)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V
  • Power - Max: 1.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
In Stock3,744
QH8K22TCR
QH8K22TCR

Rohm Semiconductor

Transistors - FETs, MOSFETs - Arrays

QH8K22 IS LOW ON - RESISTANCE MO

  • Manufacturer: Rohm Semiconductor
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 6.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 20V
  • Power - Max: 1.1W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
In Stock22,350
QH8K26TR
QH8K26TR

Rohm Semiconductor

Transistors - FETs, MOSFETs - Arrays

QH8K26 IS LOW ON-RESISTANCE AND

  • Manufacturer: Rohm Semiconductor
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Rds On (Max) @ Id, Vgs: 38mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 20V
  • Power - Max: 1.1W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
In Stock27,846
QH8K51TR
QH8K51TR

Rohm Semiconductor

Transistors - FETs, MOSFETs - Arrays

QH8K51 IS THE LOW ON - RESISTANC

  • Manufacturer: Rohm Semiconductor
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Rds On (Max) @ Id, Vgs: 325mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
  • Power - Max: 1.1W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
In Stock26,208