QH8JA1TCR
For Reference Only
| Part Number | QH8JA1TCR |
| PNEDA Part # | QH8JA1TCR |
| Description | 20V PCH+PCH MIDDLE POWER MOSFET, |
| Manufacturer | Rohm Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 3,744 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 16 - Mar 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
QH8JA1TCR Resources
| Brand | Rohm Semiconductor |
| ECAD Module |
|
| Mfr. Part Number | QH8JA1TCR |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- QH8JA1TCR Datasheet
- where to find QH8JA1TCR
- Rohm Semiconductor
- Rohm Semiconductor QH8JA1TCR
- QH8JA1TCR PDF Datasheet
- QH8JA1TCR Stock
- QH8JA1TCR Pinout
- Datasheet QH8JA1TCR
- QH8JA1TCR Supplier
- Rohm Semiconductor Distributor
- QH8JA1TCR Price
- QH8JA1TCR Distributor
QH8JA1TCR Specifications
| Manufacturer | Rohm Semiconductor |
| Series | - |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5A |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 10.2nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 720pF @ 10V |
| Power - Max | 1.5W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SMD, Flat Lead |
| Supplier Device Package | TSMT8 |
The Products You May Be Interested In
|
Manufacturer Infineon Technologies Series - FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer Toshiba Semiconductor and Storage Series - FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 170mA Rds On (Max) @ Id, Vgs 3.9Ohm @ 100mA, 10V Vgs(th) (Max) @ Id 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 17pF @ 10V Power - Max 285mW Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package US6 |
Manufacturer Infineon Technologies Series HEXFET® FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 50V Current - Continuous Drain (Id) @ 25°C 3A Rds On (Max) @ Id, Vgs 130mOhm @ 3A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 255pF @ 25V Power - Max 2.4W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Manufacturer EPC Series eGaN® FET Type 2 N-Channel (Half Bridge) FET Feature GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 1.7A Rds On (Max) @ Id, Vgs 70mOhm @ 2A, 5V Vgs(th) (Max) @ Id 2.5V @ 600µA Gate Charge (Qg) (Max) @ Vgs 0.73nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 75pF @ 50V Power - Max - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |
Manufacturer Microsemi Corporation Series CoolMOS™ FET Type 4 N-Channel (H-Bridge) FET Feature Super Junction Drain to Source Voltage (Vdss) 900V Current - Continuous Drain (Id) @ 25°C 30A Rds On (Max) @ Id, Vgs 120mOhm @ 26A, 10V Vgs(th) (Max) @ Id 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 6800pF @ 100V Power - Max 250W Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case SP4 Supplier Device Package SP4 |
