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Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

Transistors

Records 64,903
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Part Number
Description
In Stock
Quantity
PHKD13N03LT,518
PHKD13N03LT,518

Nexperia

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 10.4A 8SOIC

  • Manufacturer: Nexperia USA Inc.
  • Series: TrenchMOS™
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10.4A
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V
  • Power - Max: 3.57W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock6,552
PHKD3NQ10T,518
PHKD3NQ10T,518

Nexperia

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 100V 3A 8SOIC

  • Manufacturer: Nexperia USA Inc.
  • Series: TrenchMOS™
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 633pF @ 20V
  • Power - Max: 2W
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock4,572
PHKD6N02LT,518
PHKD6N02LT,518

Nexperia

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 10.9A SOT96-1

  • Manufacturer: Nexperia USA Inc.
  • Series: TrenchMOS™
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 10.9A
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 3A, 5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
  • Power - Max: 4.17W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock6,336
PHN203,518
PHN203,518

Nexperia

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 6.3A SOT96-1

  • Manufacturer: Nexperia USA Inc.
  • Series: TrenchMOS™
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.3A
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 20V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock3,690
PHN210,118

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 8SOIC

  • Manufacturer: NXP USA Inc.
  • Series: TrenchMOS™
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 20V
  • Power - Max: 2W
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock6,264
PHN210T,118
PHN210T,118

Nexperia

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 8SOIC

  • Manufacturer: Nexperia USA Inc.
  • Series: TrenchMOS™
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 20V
  • Power - Max: 2W
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock4,122
PHP225,118
PHP225,118

Nexperia

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 30V 2.3A 8SOIC

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A
  • Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 20V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock3,582
PMCM650CUNEZ
PMCM650CUNEZ

Nexperia

Transistors - FETs, MOSFETs - Arrays

PMCM650CUNE NAX000 NONE

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 556mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFBGA, WLCSP
  • Supplier Device Package: 6-WLCSP (1.48x0.98)
In Stock5,814
PMCPB5530X,115
PMCPB5530X,115

Nexperia

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 20V 6HUSON

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • FET Type: N and P-Channel
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3.4A (Ta)
  • Rds On (Max) @ Id, Vgs: 34mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
  • Power - Max: 490mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: 6-HUSON-EP (2x2)
In Stock318,150
PMCXB1000UEZ
PMCXB1000UEZ

Nexperia

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 30V DFN1010B-6

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 590mA (Ta), 410mA (Ta)
  • Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V, 1.4Ohm @ 410mA, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 4.5V, 1.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V, 43.2pF @ 15V
  • Power - Max: 285mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN Exposed Pad
  • Supplier Device Package: DFN1010B-6
In Stock4,302
PMCXB900UELZ
PMCXB900UELZ

Nexperia

Transistors - FETs, MOSFETs - Arrays

20 V, COMPLEMENTARY N/P-CHANNEL

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 600mA
  • Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V
  • Power - Max: 380mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN Exposed Pad
  • Supplier Device Package: DFN1010B-6
In Stock8,874
PMCXB900UEZ
PMCXB900UEZ

Nexperia

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 20V 0.6A/0.5A 6DFN

  • Manufacturer: Nexperia USA Inc.
  • Series: TrenchFET®
  • FET Type: N and P-Channel Complementary
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 600mA, 500mA
  • Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V
  • Power - Max: 265mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN Exposed Pad
  • Supplier Device Package: DFN1010B-6
In Stock550,872
PMDPB28UN,115

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 4.6A HUSON6

  • Manufacturer: NXP USA Inc.
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A
  • Rds On (Max) @ Id, Vgs: 37mOhm @ 4.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 10V
  • Power - Max: 510mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: DFN2020-6
In Stock4,716
PMDPB30XN,115
PMDPB30XN,115

Nexperia

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 4A 6HUSON

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
  • Power - Max: 490mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: 6-HUSON-EP (2x2)
In Stock4,536
PMDPB38UNE,115

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 4A HUSON6

  • Manufacturer: NXP USA Inc.
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V
  • Power - Max: 510mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: DFN2020-6
In Stock6,426
PMDPB42UN,115

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 3.9A HUSON6

  • Manufacturer: NXP USA Inc.
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.9A
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 185pF @ 10V
  • Power - Max: 510mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: DFN2020-6
In Stock7,128
PMDPB55XP,115
PMDPB55XP,115

Nexperia

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 20V 3.4A 6HUSON

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A
  • Rds On (Max) @ Id, Vgs: 70mOhm @ 3.4A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 10V
  • Power - Max: 490mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: 6-HUSON-EP (2x2)
In Stock3,492
PMDPB56XN,115

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 3.1A HUSON6

  • Manufacturer: NXP USA Inc.
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A
  • Rds On (Max) @ Id, Vgs: 73mOhm @ 3.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V
  • Power - Max: 510mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: DFN2020-6
In Stock2,862
PMDPB56XNEAX
PMDPB56XNEAX

Nexperia

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 3.1A DFN2020D-6

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
  • Rds On (Max) @ Id, Vgs: 72mOhm @ 3.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 15V
  • Power - Max: 485mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: DFN2020D-6
In Stock5,670
PMDPB58UPE,115
PMDPB58UPE,115

Nexperia

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 20V 3.6A HUSON6

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A
  • Rds On (Max) @ Id, Vgs: 67mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 10V
  • Power - Max: 515mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: 6-HUSON-EP (2x2)
In Stock67,674
PMDPB65UP,115

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 20V 3.5A SOT1118

  • Manufacturer: NXP USA Inc.
  • Series: -
  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A
  • Rds On (Max) @ Id, Vgs: 70mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 10V
  • Power - Max: 520mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: DFN2020-6
In Stock3,762
PMDPB70EN,115
PMDPB70EN,115

Nexperia

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 3.5A 6DFN

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A
  • Rds On (Max) @ Id, Vgs: 57mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 15V
  • Power - Max: 510mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: 6-HUSON-EP (2x2)
In Stock7,704
PMDPB70XP,115
PMDPB70XP,115

Nexperia

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 30V 2.9A 6DFN

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A
  • Rds On (Max) @ Id, Vgs: 87mOhm @ 2.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 15V
  • Power - Max: 490mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: 6-HUSON-EP (2x2)
In Stock2,448
PMDPB70XPE,115
PMDPB70XPE,115

Nexperia

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 20V 3A 6HUSON

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 79mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
  • Power - Max: 515mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: 6-HUSON-EP (2x2)
In Stock144,852
PMDPB760ENX
PMDPB760ENX

WeEn Semiconductors

Transistors - FETs, MOSFETs - Arrays

MOSFET AXIAL

  • Manufacturer: WeEn Semiconductors
  • Series: *
  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
In Stock7,092
PMDPB80XP,115
PMDPB80XP,115

Nexperia

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 20V 2.7A HUSON6

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate, 1.8V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A
  • Rds On (Max) @ Id, Vgs: 102mOhm @ 2.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
  • Power - Max: 485mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: 6-HUSON-EP (2x2)
In Stock6,048
PMDPB85UPE,115
PMDPB85UPE,115

Nexperia

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 20V 2.9A 6HUSON

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A
  • Rds On (Max) @ Id, Vgs: 103mOhm @ 1.3A, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 514pF @ 10V
  • Power - Max: 515mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: 6-HUSON-EP (2x2)
In Stock6,228
PMDPB95XNE,115

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 2.4A HUSON6

  • Manufacturer: NXP USA Inc.
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A
  • Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 15V
  • Power - Max: 475mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: DFN2020-6
In Stock3,924
PMDPB95XNE2X
PMDPB95XNE2X

Nexperia

Transistors - FETs, MOSFETs - Arrays

MOSFET 2 N-CH 30V 2.7A 6HUSON

  • Manufacturer: Nexperia USA Inc.
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
  • Rds On (Max) @ Id, Vgs: 99mOhm @ 2.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 258pF @ 15V
  • Power - Max: 510mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: 6-HUSON-EP (2x2)
In Stock22,344
PMDT290UCE,115
PMDT290UCE,115

Nexperia

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 20V SOT666

  • Manufacturer: Nexperia USA Inc.
  • Series: Automotive, AEC-Q101, TrenchMOS™
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 800mA, 550mA
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
In Stock344,952