PMGD280UN,115
For Reference Only
| Part Number | PMGD280UN,115 |
| PNEDA Part # | PMGD280UN-115 |
| Description | MOSFET 2N-CH 20V 0.87A 6TSSOP |
| Manufacturer | Nexperia |
| Unit Price | Request a Quote |
| In Stock | 57,954 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Dec 6 - Dec 11 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
PMGD280UN Resources
| Brand | Nexperia |
| ECAD Module |
|
| Mfr. Part Number | PMGD280UN,115 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- PMGD280UN,115 Datasheet
- where to find PMGD280UN,115
- Nexperia
- Nexperia PMGD280UN,115
- PMGD280UN,115 PDF Datasheet
- PMGD280UN,115 Stock
- PMGD280UN,115 Pinout
- Datasheet PMGD280UN,115
- PMGD280UN,115 Supplier
- Nexperia Distributor
- PMGD280UN,115 Price
- PMGD280UN,115 Distributor
PMGD280UN Specifications
| Manufacturer | Nexperia USA Inc. |
| Series | TrenchMOS™ |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 870mA |
| Rds On (Max) @ Id, Vgs | 340mOhm @ 200mA, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.89nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 45pF @ 20V |
| Power - Max | 400mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | 6-TSSOP |
The Products You May Be Interested In
|
Manufacturer ON Semiconductor Series - FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 7.5A (Ta), 26A (Tc) Rds On (Max) @ Id, Vgs 28mOhm @ 5A, 10V Vgs(th) (Max) @ Id 2.2V @ 13µA Gate Charge (Qg) (Max) @ Vgs 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V Power - Max 3W (Ta), 19W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerTDFN Supplier Device Package 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
Manufacturer Diodes Incorporated Series * FET Type - FET Feature - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer Toshiba Semiconductor and Storage Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 250mA (Ta) Rds On (Max) @ Id, Vgs 2.2Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 12pF @ 10V Power - Max 300mW Operating Temperature 150°C Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package US6 |
Manufacturer Rohm Semiconductor Series - FET Type N and P-Channel FET Feature - Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 3.5A Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max - Operating Temperature - Mounting Type Surface Mount Package / Case 8-SMD, Flat Lead Supplier Device Package TSMT8 |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 950mA Rds On (Max) @ Id, Vgs 350mOhm @ 950mA, 4.5V Vgs(th) (Max) @ Id 1.2V @ 1.6µA Gate Charge (Qg) (Max) @ Vgs 0.32nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 63pF @ 10V Power - Max 500mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-VSSOP, SC-88, SOT-363 Supplier Device Package PG-SOT363-6 |
