Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 791/2164

Part Number	Description	In Stock
IRFHM792TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 100V 2.3A 8PQFN Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 195mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 4V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 251pF @ 25V Power - Max: 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-PQFN (3.3x3.3), Power33	In Stock5,400
IRFHM8363TR2PBF Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 11A 8PQFN Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 10V Power - Max: 2.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-PQFN (3.3x3.3), Power33	In Stock7,596
IRFHM8363TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 11A 8PQFN Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 10V Power - Max: 2.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-PQFN (3.3x3.3), Power33	In Stock8,154
IRFHS9351TR2PBF Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 2.3A PQFN Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 170mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 2.4V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerVDFN Supplier Device Package: 6-PQFN Dual (2x2)	In Stock3,618
IRFHS9351TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 2.3A PQFN Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 170mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 2.4V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VQFN Exposed Pad Supplier Device Package: 6-PQFN (2x2)	In Stock91,506
IRFI4019H-117P Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 150V 8.7A TO-220FP Manufacturer: Infineon Technologies Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 8.7A Rds On (Max) @ Id, Vgs: 95mOhm @ 5.2A, 10V Vgs(th) (Max) @ Id: 4.9V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V Power - Max: 18W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-5 Full Pack Supplier Device Package: TO-220-5 Full-Pak	In Stock20,976
IRFI4019HG-117P Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 150V 8.7A TO-220FP Manufacturer: Infineon Technologies Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 8.7A Rds On (Max) @ Id, Vgs: 95mOhm @ 5.2A, 10V Vgs(th) (Max) @ Id: 4.9V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V Power - Max: 18W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-5 Full Pack (Formed Leads) Supplier Device Package: TO-220-5 Full-Pak	In Stock2,484
IRFI4020H-117P Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 200V 9.1A TO-220FP Manufacturer: Infineon Technologies Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 9.1A Rds On (Max) @ Id, Vgs: 100mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 25V Power - Max: 21W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-5 Full Pack Supplier Device Package: TO-220-5 Full-Pak	In Stock8,112
IRFI4024H-117P Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 55V 11A TO-220FP-5 Manufacturer: Infineon Technologies Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 11A Rds On (Max) @ Id, Vgs: 60mOhm @ 7.7A, 10V Vgs(th) (Max) @ Id: 4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 50V Power - Max: 14W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-5 Full Pack Supplier Device Package: TO-220-5 Full-Pak	In Stock2,286
IRFI4212H-117P Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 100V 11A TO-220FP-5 Manufacturer: Infineon Technologies Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11A Rds On (Max) @ Id, Vgs: 72.5mOhm @ 6.6A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 50V Power - Max: 18W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-5 Full Pack Supplier Device Package: TO-220-5 Full-Pak	In Stock8,496
IRL6297SDTRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 15A DIRECTFET Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2245pF @ 10V Power - Max: 1.7W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric SA Supplier Device Package: DIRECTFET™ SA	In Stock4,788
IRL6372PBF Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 8.1A 8SO Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.1A Rds On (Max) @ Id, Vgs: 17.9mOhm @ 8.1A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock16,979
IRL6372TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 8.1A 8SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.1A Rds On (Max) @ Id, Vgs: 17.9mOhm @ 8.1A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock32,406
IRLHS6276TR2PBF Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 4.5A PQFN Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 45mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerVDFN Supplier Device Package: 6-PQFN Dual (2x2)	In Stock4,086
IRLHS6276TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 4.5A PQFN Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 45mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VQFN Supplier Device Package: 6-PQFN (2x2)	In Stock85,410
IRLHS6376TR2PBF Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 3.6A PQFN Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A Rds On (Max) @ Id, Vgs: 63mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-PQFN (2x2)	In Stock53
IRLHS6376TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 3.6A PQFN Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A Rds On (Max) @ Id, Vgs: 63mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-PQFN (2x2)	In Stock35,898
IXTL2X180N10T IXYS	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 100V 100A I5-PAK Manufacturer: IXYS Series: Trench™ FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 100A Rds On (Max) @ Id, Vgs: 7.4mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 151nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V Power - Max: 150W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: ISOPLUSi5-Pak™ Supplier Device Package: ISOPLUSi5-Pak™	In Stock7,812
IXTL2X200N085T IXYS	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 85V 112A I5-PAK Manufacturer: IXYS Series: TrenchMV™ FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 85V Current - Continuous Drain (Id) @ 25°C: 112A Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V Power - Max: 150W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: ISOPLUSi5-Pak™ Supplier Device Package: ISOPLUSi5-Pak™	In Stock2,448
IXTL2X220N075T IXYS	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 75V 120A I5-PAK Manufacturer: IXYS Series: TrenchMV™ FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 120A Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 25V Power - Max: 150W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: ISOPLUSi5-Pak™ Supplier Device Package: ISOPLUSi5-Pak™	In Stock6,192
IXTL2X240N055T IXYS	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 55V 140A ISOPLUS I5 Manufacturer: IXYS Series: TrenchMV™ FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 140A Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V Power - Max: 150W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: ISOPLUSi5-Pak™ Supplier Device Package: ISOPLUSi5-Pak™	In Stock3,276
JAN2N7334 Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 100V 1A MO-036AB Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/597 FET Type: 4 N-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: MO-036AB	In Stock8,154
JAN2N7335 Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4P-CH 100V 0.75A MO-036AB Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/599 FET Type: 4 P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 750mA Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: -	In Stock3,654
JANTX2N7334 Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 100V 1A MO-036AB Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/597 FET Type: 4 N-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: MO-036AB	In Stock2,970
JANTX2N7335 Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4P-CH 100V 0.75A MO-036AB Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/599 FET Type: 4 P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 750mA Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: MO-036AB	In Stock8,316
JANTXV2N7334 Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 100V 1A MO-036AB Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/597 FET Type: 4 N-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: MO-036AB	In Stock5,796
JANTXV2N7335 Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4P-CH 100V 0.75A MO-036AB Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/599 FET Type: 4 P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 750mA Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: MO-036AB	In Stock8,460
KGF16N05D-400 Renesas Electronics America Inc.	Transistors - FETs, MOSFETs - Arrays MOSFET N-CH 5.5V DUAL 20WLCSP Manufacturer: Renesas Electronics America Inc. Series: - FET Type: 2 N-Channel (Dual) Common Source FET Feature: Standard Drain to Source Voltage (Vdss): 5.5V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 0.95mOhm @ 8A, 4.5V Vgs(th) (Max) @ Id: 0.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 5V Power - Max: 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 20-UFLGA, CSP Supplier Device Package: 20-WLCSP (2.48x1.17)	In Stock4,212
KGF6N05D-400 Renesas Electronics America Inc.	Transistors - FETs, MOSFETs - Arrays IC MOSFET N-CH Manufacturer: Renesas Electronics America Inc. Series: - FET Type: 2 N-Channel (Dual) Common Source FET Feature: Standard Drain to Source Voltage (Vdss): 5.5V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 3mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 0.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 3.5V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 5.5V Power - Max: 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 20-UFLGA, CSP Supplier Device Package: 20-WLCSP (2.48x1.17)	In Stock2,718
LKK47-06C5 IXYS	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 600V 47A ISOPLUS264 Manufacturer: IXYS Series: CoolMOS™ FET Type: 2 N-Channel (Dual) FET Feature: Super Junction Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 47A Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V Vgs(th) (Max) @ Id: 3.9V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: ISOPLUS264™ Supplier Device Package: ISOPLUS264™	In Stock8,676

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