IRLHS6376TR2PBF

For Reference Only
Part Number | IRLHS6376TR2PBF | ||||||||||||||||||
PNEDA Part # | IRLHS6376TR2PBF | ||||||||||||||||||
Description | MOSFET 2N-CH 30V 3.6A PQFN | ||||||||||||||||||
Manufacturer | Infineon Technologies | ||||||||||||||||||
Unit Price |
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In Stock | 53 | ||||||||||||||||||
Warehouses | Shipped from Hong Kong SAR | ||||||||||||||||||
Estimated Delivery | Apr 3 - Apr 8 (Choose Expedited Shipping) | ||||||||||||||||||
Guarantee | Up to 1 year [PNEDA-Warranty]* | ||||||||||||||||||
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IRLHS6376TR2PBF Resources
Brand | Infineon Technologies |
ECAD Module |
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Mfr. Part Number | IRLHS6376TR2PBF |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
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IRLHS6376TR2PBF Specifications
Manufacturer | Infineon Technologies |
Series | HEXFET® |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 3.6A |
Rds On (Max) @ Id, Vgs | 63mOhm @ 3.4A, 4.5V |
Vgs(th) (Max) @ Id | 1.1V @ 10µA |
Gate Charge (Qg) (Max) @ Vgs | 2.8nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 270pF @ 25V |
Power - Max | 1.5W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-VDFN Exposed Pad |
Supplier Device Package | 6-PQFN (2x2) |
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