IRFHM8363TR2PBF
For Reference Only
| Part Number | IRFHM8363TR2PBF |
| PNEDA Part # | IRFHM8363TR2PBF |
| Description | MOSFET 2N-CH 30V 11A 8PQFN |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 7,596 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 31 - Apr 5 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IRFHM8363TR2PBF Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | IRFHM8363TR2PBF |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IRFHM8363TR2PBF Datasheet
- where to find IRFHM8363TR2PBF
- Infineon Technologies
- Infineon Technologies IRFHM8363TR2PBF
- IRFHM8363TR2PBF PDF Datasheet
- IRFHM8363TR2PBF Stock
- IRFHM8363TR2PBF Pinout
- Datasheet IRFHM8363TR2PBF
- IRFHM8363TR2PBF Supplier
- Infineon Technologies Distributor
- IRFHM8363TR2PBF Price
- IRFHM8363TR2PBF Distributor
IRFHM8363TR2PBF Specifications
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 11A |
| Rds On (Max) @ Id, Vgs | 14.9mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1165pF @ 10V |
| Power - Max | 2.7W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | 8-PQFN (3.3x3.3), Power33 |
The Products You May Be Interested In
|
Manufacturer Infineon Technologies Series HEXFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 5.2A Rds On (Max) @ Id, Vgs 50mOhm @ 2.6A, 4.5V Vgs(th) (Max) @ Id 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 660pF @ 15V Power - Max 2W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Manufacturer Diodes Incorporated Series * FET Type - FET Feature - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max - Operating Temperature - Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package SOT-363 |
Manufacturer EPC Series eGaN® FET Type 2 N-Channel (Half Bridge) FET Feature GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 10A (Ta), 40A (Ta) Rds On (Max) @ Id, Vgs 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V Vgs(th) (Max) @ Id 2.5V @ 4mA, 2.5V @ 16mA Gate Charge (Qg) (Max) @ Vgs 4.9nC @ 15V, 19nC @ 15V Input Capacitance (Ciss) (Max) @ Vds 475pF @ 15V, 1960pF @ 15V Power - Max - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 8A Rds On (Max) @ Id, Vgs 19.5mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1255pF @ 15V Power - Max 3.2W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Manufacturer Diodes Incorporated Series * FET Type - FET Feature - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
