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IRL6372TRPBF

IRL6372TRPBF

For Reference Only

Part Number IRL6372TRPBF
PNEDA Part # IRL6372TRPBF
Description MOSFET 2N-CH 30V 8.1A 8SOIC
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 32,406
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRL6372TRPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRL6372TRPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays

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IRL6372TRPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C8.1A
Rds On (Max) @ Id, Vgs17.9mOhm @ 8.1A, 4.5V
Vgs(th) (Max) @ Id1.1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1020pF @ 25V
Power - Max2W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

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Drain to Source Voltage (Vdss)

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Rds On (Max) @ Id, Vgs

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

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