Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

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Part Number	Description	In Stock
APTMC120TAM33CTPAG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 1200V 78A SP6-P Manufacturer: Microsemi Corporation Series: - FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 60A, 20V Vgs(th) (Max) @ Id: 2.2V @ 3mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 148nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 1000V Power - Max: 370W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	In Stock3,420
APTMC120TAM34CT3AG Microsemi	Transistors - FETs, MOSFETs - Arrays POWER MODULE - SIC MOSFET Manufacturer: Microsemi Corporation Series: - FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V Vgs(th) (Max) @ Id: 4V @ 15mA Gate Charge (Qg) (Max) @ Vgs: 161nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2788pF @ 1000V Power - Max: 375W Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3	In Stock8,982
APTMC170AM30CT1AG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1700V 106A SP1 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N Channel (Phase Leg) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 100A, 20V Vgs(th) (Max) @ Id: 2.3V @ 5mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 380nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6160pF @ 1000V Power - Max: 700W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	In Stock8,802
APTMC170AM60CT1AG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1700V 53A SP1 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N Channel (Phase Leg) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 50A, 20V Vgs(th) (Max) @ Id: 2.3V @ 2.5mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 190nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 1000V Power - Max: 350W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	In Stock5,364
APTMC60TL11CT3AG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 1200V 28A SP3 Manufacturer: Microsemi Corporation Series: - FET Type: 4 N-Channel (Three Level Inverter) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 1000V Power - Max: 125W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	In Stock2,286
APTMC60TLM14CAG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 1200V 219A SP6C Manufacturer: Microsemi Corporation Series: - FET Type: 4 N-Channel (Three Level Inverter) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 219A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 150A, 20V Vgs(th) (Max) @ Id: 2.4V @ 30mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 483nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 1000V Power - Max: 925W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	In Stock5,472
APTMC60TLM55CT3AG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 1200V 55A SP3F Manufacturer: Microsemi Corporation Series: - FET Type: 4 N-Channel (Three Level Inverter) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 49mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.2V @ 2mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 98nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 1000V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	In Stock2,916
APTML1002U60R020T3AG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1000V 20A SP3 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 720mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V Power - Max: 520W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	In Stock7,308
APTML102UM09R004T3AG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 100V 154A SP3 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 154A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V Power - Max: 480W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	In Stock2,268
APTML202UM18R010T3AG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 200V 109A SP3 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 109A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9880pF @ 25V Power - Max: 480W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	In Stock8,856
APTML502UM90R020T3AG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 500V 52A SP3 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 52A Rds On (Max) @ Id, Vgs: 108mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V Power - Max: 568W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	In Stock8,748
APTML602U12R020T3AG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 600V 45A SP3 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 45A Rds On (Max) @ Id, Vgs: 150mOhm @ 22.5A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V Power - Max: 568W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	In Stock7,020
APTSM120AM08CT6AG Microsemi	Transistors - FETs, MOSFETs - Arrays POWER MODULE - SIC Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Dual), Schottky FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 370A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 200A, 20V Vgs(th) (Max) @ Id: 3V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2300W Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	In Stock6,408
APTSM120AM09CD3AG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 1200V 337A MODULE Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Dual) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 337A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 180A, 20V Vgs(th) (Max) @ Id: 3V @ 9mA Gate Charge (Qg) (Max) @ Vgs: 1224nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 1000V Power - Max: - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	In Stock3,168
APTSM120AM14CD3AG Microsemi	Transistors - FETs, MOSFETs - Arrays POWER MODULE - SIC Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Dual), Schottky FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 337A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 180A, 20V Vgs(th) (Max) @ Id: 3V @ 9mA Gate Charge (Qg) (Max) @ Vgs: 1224nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 1000V Power - Max: 2140W Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	In Stock2,160
APTSM120AM25CT3AG Microsemi	Transistors - FETs, MOSFETs - Arrays POWER MODULE - SIC Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Dual), Schottky FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 148A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 3V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 544nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 1000V Power - Max: 937W Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	In Stock6,444
APTSM120AM55CT1AG Microsemi	Transistors - FETs, MOSFETs - Arrays POWER MODULE - SIC Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Dual), Schottky FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 3V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 272nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 5120pF @ 1000V Power - Max: 470W Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	In Stock3,400
APTSM120TAM33CTPAG Microsemi	Transistors - FETs, MOSFETs - Arrays POWER MODULE - SIC Manufacturer: Microsemi Corporation Series: - FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 112A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 60A, 20V Vgs(th) (Max) @ Id: 3V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 408nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 7680pF @ 1000V Power - Max: 714W Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	In Stock6,858
AUIRF7103Q Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 50V 3A 8SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V Power - Max: 2.4W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock4,716
AUIRF7103QTR Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 50V 3A 8SOIC Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, HEXFET® FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V Power - Max: 2.4W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock8,280
AUIRF7303Q Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 5.3A 8SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.3A Rds On (Max) @ Id, Vgs: 50mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id: 3V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 515pF @ 25V Power - Max: 2.4W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock4,374
AUIRF7303QTR Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 5.3A 8SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.3A Rds On (Max) @ Id, Vgs: 50mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id: 3V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 515pF @ 25V Power - Max: 2.4W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock5,652
AUIRF7304Q Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 4A 8SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.3A Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock7,992
AUIRF7304QTR Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 4A 8SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.3A Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock4,950
AUIRF7309Q Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 4A/3A 8SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3A Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock5,580
AUIRF7309QTR Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 4A/3A 8SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3A Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock28,158
AUIRF7313Q Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 6.5A 8SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A Rds On (Max) @ Id, Vgs: 29mOhm @ 6.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V Power - Max: 2.4W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock6,174
AUIRF7313QTR Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 6.5A 8SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A Rds On (Max) @ Id, Vgs: 29mOhm @ 6.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V Power - Max: 2.4W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock5,958
AUIRF7316Q Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 4.9A 8SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock8,640
AUIRF7316QTR Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 4.9A 8SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock3,366

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