Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 737/2164

Part Number	Description	In Stock
APTM120A80FT1G Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1200V 14A SP1 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 14A Rds On (Max) @ Id, Vgs: 960mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6696pF @ 25V Power - Max: 357W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	In Stock2,898
APTM120DDA57T3G Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1200V 17A SP3 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 17A Rds On (Max) @ Id, Vgs: 684mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	In Stock4,680
APTM120DSK57T3G Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1200V 17A SP3 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 17A Rds On (Max) @ Id, Vgs: 684mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	In Stock3,906
APTM120DU15G Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1200V 60A SP6 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 60A Rds On (Max) @ Id, Vgs: 175mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 748nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20600pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	In Stock6,984
APTM120DU29TG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1200V 34A SP4 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 34A Rds On (Max) @ Id, Vgs: 348mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V Power - Max: 780W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	In Stock4,032
APTM120H140FT1G Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 1200V 8A SP1 Manufacturer: Microsemi Corporation Series: - FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 1.68Ohm @ 7A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3812pF @ 25V Power - Max: 208W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	In Stock3,942
APTM120H29FG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 1200V 34A SP6 Manufacturer: Microsemi Corporation Series: POWER MOS 7® FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 34A Rds On (Max) @ Id, Vgs: 348mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V Power - Max: 780W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	In Stock3,006
APTM120H57FT3G Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 1200V 17A SP3 Manufacturer: Microsemi Corporation Series: - FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 17A Rds On (Max) @ Id, Vgs: 684mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	In Stock8,766
APTM120H57FTG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 1200V 17A SP4 Manufacturer: Microsemi Corporation Series: - FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 17A Rds On (Max) @ Id, Vgs: 684mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	In Stock8,118
APTM120TA57FPG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 1200V 17A SP6-P Manufacturer: Microsemi Corporation Series: - FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 17A Rds On (Max) @ Id, Vgs: 684mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	In Stock3,240
APTM120TDU57PG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 1200V 17A SP6-P Manufacturer: Microsemi Corporation Series: - FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 17A Rds On (Max) @ Id, Vgs: 684mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	In Stock2,124
APTM120VDA57T3G Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1200V 17A SP3 Manufacturer: Microsemi Corporation Series: POWER MOS 7® FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 17A Rds On (Max) @ Id, Vgs: 684mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	In Stock2,340
APTM20AM04FG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 200V 372A SP6 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 372A Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	In Stock6,966
APTM20AM05FG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 200V 317A SP6 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 317A Rds On (Max) @ Id, Vgs: 5mOhm @ 158.5A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V Power - Max: 1136W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	In Stock4,788
APTM20AM05FTG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 200V 333A SP4 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 333A Rds On (Max) @ Id, Vgs: 5mOhm @ 166.5A, 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 1184nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 40800pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	In Stock2,250
APTM20AM06SG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 200V 300A SP6 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 300A Rds On (Max) @ Id, Vgs: 7.2mOhm @ 150A, 10V Vgs(th) (Max) @ Id: 5V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	In Stock7,110
APTM20AM08FTG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 200V 208A SP4 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 208A Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V Power - Max: 781W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	In Stock8,460
APTM20AM10FTG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 200V 175A SP4 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 175A Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V Power - Max: 694W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	In Stock3,024
APTM20AM10STG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 200V 175A SP4 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 175A Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V Power - Max: 694W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	In Stock3,078
APTM20DHM08G Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 200V 208A SP6 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 208A Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V Power - Max: 781W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	In Stock5,328
APTM20DHM10G Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 200V 175A SP6 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 175A Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V Power - Max: 694W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	In Stock7,794
APTM20DHM16T3G Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 200V 104A SP3 Manufacturer: Microsemi Corporation Series: POWER MOS 7® FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 104A Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	In Stock6,714
APTM20DHM16TG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 200V 104A SP4 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 104A Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	In Stock2,826
APTM20DHM20TG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 200V 89A SP4 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 89A Rds On (Max) @ Id, Vgs: 24mOhm @ 44.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V Power - Max: 357W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	In Stock4,860
APTM20DUM04G Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 200V 372A SP6 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 372A Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	In Stock2,088
APTM20DUM05G Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 200V 317A SP6 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 317A Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V Power - Max: 1136W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	In Stock2,466
APTM20DUM05TG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 200V 333A SP8 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 333A Rds On (Max) @ Id, Vgs: 5mOhm @ 166.5A, 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 1184nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 40800pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	In Stock6,138
APTM20DUM08TG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 200V 208A SP4 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 208A Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V Power - Max: 781W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	In Stock5,688
APTM20DUM10TG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 200V 175A SP4 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 175A Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V Power - Max: 694W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	In Stock4,914
APTM20HM08FG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 200V 208A SP6 Manufacturer: Microsemi Corporation Series: - FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 208A Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V Power - Max: 781W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	In Stock7,938

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