Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 739/2164

Part Number	Description	In Stock
APTM50DUM35TG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 500V 99A SP4 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 99A Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Power - Max: 781W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	In Stock6,966
APTM50DUM38TG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 500V 90A SP4 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 90A Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V Power - Max: 694W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	In Stock5,832
APTM50H10FT3G Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 500V 37A SP3 Manufacturer: Microsemi Corporation Series: - FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 37A Rds On (Max) @ Id, Vgs: 120mOhm @ 18.5A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4367pF @ 25V Power - Max: 312W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	In Stock8,388
APTM50H14FT3G Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 500V 26A SP3 Manufacturer: Microsemi Corporation Series: - FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 26A Rds On (Max) @ Id, Vgs: 168mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3259pF @ 25V Power - Max: 208W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	In Stock5,202
APTM50H15FT1G Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 500V 25A SP1 Manufacturer: Microsemi Corporation Series: - FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 25A Rds On (Max) @ Id, Vgs: 180mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5448pF @ 25V Power - Max: 208W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	In Stock5,346
APTM50HM35FG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 500V 99A SP6 Manufacturer: Microsemi Corporation Series: - FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 99A Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Power - Max: 781W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	In Stock3,870
APTM50HM38FG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 500V 90A SP6 Manufacturer: Microsemi Corporation Series: - FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 90A Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V Power - Max: 694W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	In Stock5,040
APTM50HM65FT3G Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 500V 51A SP3 Manufacturer: Microsemi Corporation Series: - FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 51A Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	In Stock4,914
APTM50HM65FTG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 500V 51A SP4 Manufacturer: Microsemi Corporation Series: - FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 51A Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	In Stock3,636
APTM50HM75FT3G Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 500V 46A SP3 Manufacturer: Microsemi Corporation Series: - FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 46A Rds On (Max) @ Id, Vgs: 90mOhm @ 23A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V Power - Max: 357W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	In Stock2,178
APTM50HM75FTG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 500V 46A SP4 Manufacturer: Microsemi Corporation Series: - FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 46A Rds On (Max) @ Id, Vgs: 90mOhm @ 23A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V Power - Max: 357W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	In Stock4,338
APTM50HM75SCTG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 500V 46A SP4 Manufacturer: Microsemi Corporation Series: - FET Type: 4 N-Channel (H-Bridge) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 46A Rds On (Max) @ Id, Vgs: 90mOhm @ 23A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5590pF @ 25V Power - Max: 357W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	In Stock4,500
APTM50HM75STG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 500V 46A SP4 Manufacturer: Microsemi Corporation Series: - FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 46A Rds On (Max) @ Id, Vgs: 90mOhm @ 23A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V Power - Max: 357W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	In Stock8,964
APTM50TAM65FPG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 500V 51A SP6-P Manufacturer: Microsemi Corporation Series: - FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 51A Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	In Stock4,968
APTM50TDUM65PG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 500V 51A SP6-P Manufacturer: Microsemi Corporation Series: - FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 51A Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	In Stock4,302
APTM60A11FT1G Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 600V 40A SP1 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 40A Rds On (Max) @ Id, Vgs: 132mOhm @ 33A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10552pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	In Stock5,868
APTM60A23FT1G Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 600V 20A SP1 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 276mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5316pF @ 25V Power - Max: 208W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	In Stock4,212
APTM60H23FT1G Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 600V 20A SP1 Manufacturer: Microsemi Corporation Series: - FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 276mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5316pF @ 25V Power - Max: 208W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	In Stock6,966
APTMC120AM08CD3AG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1200V 250A D3 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Half Bridge) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 250A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 200A, 20V Vgs(th) (Max) @ Id: 2.2V @ 10mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 490nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 9500pF @ 1000V Power - Max: 1100W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: D-3 Module Supplier Device Package: D3	In Stock6,300
APTMC120AM09CT3AG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1200V 295A SP3F Manufacturer: Microsemi Corporation Series: - FET Type: 2 N Channel (Phase Leg) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 295A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 200A, 20V Vgs(th) (Max) @ Id: 2.4V @ 40mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 644nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 1000V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	In Stock5,796
APTMC120AM12CT3AG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1200V 220A SP3F Manufacturer: Microsemi Corporation Series: - FET Type: 2 N Channel (Phase Leg) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 150A, 20V Vgs(th) (Max) @ Id: 2.4V @ 30mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 483nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 1000V Power - Max: 925W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	In Stock3,978
APTMC120AM16CD3AG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1200V 131A D3 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Half Bridge) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 131A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 100A, 20V Vgs(th) (Max) @ Id: 2.2V @ 5mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 246nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 1000V Power - Max: 625W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: D-3 Module Supplier Device Package: D3	In Stock3,490
APTMC120AM20CT1AG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1200V 143A SP1 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N Channel (Phase Leg) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 143A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 100A, 20V Vgs(th) (Max) @ Id: 2.3V @ 2mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 360nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 5960pF @ 1000V Power - Max: 600W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	In Stock6,732
APTMC120AM25CT3AG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1200V 105A SP3F Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Half Bridge) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 113A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.2V @ 4mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 197nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 1000V Power - Max: 500W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	In Stock8,316
APTMC120AM55CT1AG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1200V 55A SP1 Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Half Bridge) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 49mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.2V @ 2mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 98nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 1000V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	In Stock5,562
APTMC120HM17CT3AG Microsemi	Transistors - FETs, MOSFETs - Arrays POWER MODULE - SIC MOSFET Manufacturer: Microsemi Corporation Series: - FET Type: 4 N-Channel FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 147A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 100A, 20V Vgs(th) (Max) @ Id: 4V @ 30mA Gate Charge (Qg) (Max) @ Vgs: 332nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 5576pF @ 1000V Power - Max: 750W Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3	In Stock2,826
APTMC120HR11CT3AG Microsemi	Transistors - FETs, MOSFETs - Arrays POWER MODULE - SIC MOSFET Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Dual) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 20A, 20V Vgs(th) (Max) @ Id: 3V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 1000V Power - Max: 125W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3	In Stock6,156
APTMC120HRM40CT3AG Microsemi	Transistors - FETs, MOSFETs - Arrays POWER MODULE - SIC MOSFET Manufacturer: Microsemi Corporation Series: - FET Type: 2 N-Channel (Dual) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V Vgs(th) (Max) @ Id: 3V @ 12.5mA Gate Charge (Qg) (Max) @ Vgs: 161nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2788pF @ 1000V Power - Max: 375W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3	In Stock4,716
APTMC120TAM12CTPAG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 1200V 220A SP6P Manufacturer: Microsemi Corporation Series: - FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 150A, 20V Vgs(th) (Max) @ Id: 2.4V @ 30mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 483nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 1000V Power - Max: 925W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	In Stock4,572
APTMC120TAM17CTPAG Microsemi	Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 1200V 147A SP6P Manufacturer: Microsemi Corporation Series: - FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 147A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 100A, 20V Vgs(th) (Max) @ Id: 2.4V @ 20mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 322nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 1000V Power - Max: 625W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	In Stock2,340

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