Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
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Records 64,903

Page 743/2164

Part Number	Description	In Stock
BSM120D12P2C005 Rohm Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1200V 120A MODULE Manufacturer: Rohm Semiconductor Series: - FET Type: 2 N-Channel (Half Bridge) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 2.7V @ 22mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 10V Power - Max: 780W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: - Package / Case: Module Supplier Device Package: Module	In Stock94
BSM180D12P2C101 Rohm Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1200V 180A MODULE Manufacturer: Rohm Semiconductor Series: - FET Type: 2 N-Channel (Half Bridge) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 204A (Tc) Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 4V @ 35.2mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 10V Power - Max: 1130W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: - Package / Case: Module Supplier Device Package: Module	In Stock8,424
BSM180D12P3C007 Rohm Semiconductor	Transistors - FETs, MOSFETs - Arrays SIC POWER MODULE Manufacturer: Rohm Semiconductor Series: - FET Type: 2 N-Channel (Dual) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 5.6V @ 50mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V Power - Max: 880W Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: Module Supplier Device Package: Module	In Stock2,471
BSM250D17P2E004 Rohm Semiconductor	Transistors - FETs, MOSFETs - Arrays HALF BRIDGE MODULE CONSISTING OF Manufacturer: Rohm Semiconductor Series: - FET Type: 2 N-Channel (Half Bridge) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 250A (Tc) Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 4V @ 66mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 30000pF @ 10V Power - Max: 1800W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	In Stock3,852
BSM300D12P2E001 Rohm Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1200V 300A Manufacturer: Rohm Semiconductor Series: - FET Type: 2 N-Channel (Half Bridge) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 4V @ 68mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 35000pF @ 10V Power - Max: 1875W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	In Stock7,416
BSO150N03 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 7.6A 8DSO Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.6A Rds On (Max) @ Id, Vgs: 15mOhm @ 9.1A, 10V Vgs(th) (Max) @ Id: 2V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	In Stock7,092
BSO150N03MDGXUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 8A 8DSO Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 15mOhm @ 9.3A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	In Stock230,490
BSO200N03 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 6.6A 8DSO Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.6A Rds On (Max) @ Id, Vgs: 20mOhm @ 7.9A, 10V Vgs(th) (Max) @ Id: 2V @ 13µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	In Stock8,424
BSO203PHXUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 7A 8DSO Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 15V Power - Max: 1.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: P-DSO-8	In Stock7,542
BSO203PNTMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 8.2A 8SOIC Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8.2A Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 48.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2242pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: P-DSO-8	In Stock6,228
BSO204PNTMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 7A 8SOIC Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 60µA Gate Charge (Qg) (Max) @ Vgs: 35.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1513pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: P-DSO-8	In Stock6,048
BSO207PHXUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 5A 8DSO Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 45mOhm @ 5.7A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 44µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 15V Power - Max: 1.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	In Stock4,014
BSO207PNTMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 5.7A 8SOIC Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.7A Rds On (Max) @ Id, Vgs: 45mOhm @ 5.7A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 23.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1013pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: P-DSO-8	In Stock2,376
BSO211PHXUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 4A 8DSO Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 67mOhm @ 4.6A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1095pF @ 15V Power - Max: 1.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	In Stock5,382
BSO211PNTMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 4.7A 8SOIC Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.7A Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 23.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: P-DSO-8	In Stock2,610
BSO215C Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 3.7A 8SOIC Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.7A Rds On (Max) @ Id, Vgs: 100mOhm @ 3.7A, 10V Vgs(th) (Max) @ Id: 2V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 246pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock3,490
BSO220N03MDGXUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 6A 8DSO Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 22mOhm @ 7.7A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	In Stock326,700
BSO303PHXUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 7A 8DSO Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 10V Vgs(th) (Max) @ Id: 2V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2678pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	In Stock7,848
BSO303PNTMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 8.2A 8DSO Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.2A Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 10V Vgs(th) (Max) @ Id: 2V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 72.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1761pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: P-DSO-8	In Stock6,858
BSO330N02KGFUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 5.4A 8DSO Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.4A Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 10V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	In Stock7,074
BSO350N03 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 5A 8DSO Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2V @ 6µA Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 15V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	In Stock8,370
BSO4804 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 8A 8SOIC Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock5,526
BSO4804HUMA2 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 30V 8A DSO8 Manufacturer: Infineon Technologies Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	In Stock5,346
BSO4804T Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 8A 8SOIC Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock2,142
BSO604NS2XUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 55V 5A 8DSO Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: P-DSO-8	In Stock2,664
BSO612CV Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 60V 3A/2A 8SOIC Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A, 2A Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: P-DSO-8	In Stock7,740
BSO612CVGHUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 60V 2A 8-SOIC Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A, 2A Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	In Stock7,974
BSO615CGHUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 60V 3.1A/2A 8SOIC Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.1A, 2A Rds On (Max) @ Id, Vgs: 110mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	In Stock50,454
BSO615CT Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 60V 3.1A/2A 8SOIC Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.1A, 2A Rds On (Max) @ Id, Vgs: 110mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	In Stock5,436
BSO615N Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 2.6A 8SOIC Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.6A Rds On (Max) @ Id, Vgs: 150mOhm @ 2.6A, 4.5V Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	In Stock3,906

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