APTM120DU29TG
For Reference Only
Part Number | APTM120DU29TG |
PNEDA Part # | APTM120DU29TG |
Description | MOSFET 2N-CH 1200V 34A SP4 |
Manufacturer | Microsemi |
Unit Price | Request a Quote |
In Stock | 4,032 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
APTM120DU29TG Resources
Brand | Microsemi |
ECAD Module | |
Mfr. Part Number | APTM120DU29TG |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- APTM120DU29TG Datasheet
- where to find APTM120DU29TG
- Microsemi
- Microsemi APTM120DU29TG
- APTM120DU29TG PDF Datasheet
- APTM120DU29TG Stock
- APTM120DU29TG Pinout
- Datasheet APTM120DU29TG
- APTM120DU29TG Supplier
- Microsemi Distributor
- APTM120DU29TG Price
- APTM120DU29TG Distributor
APTM120DU29TG Specifications
Manufacturer | Microsemi Corporation |
Series | - |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 34A |
Rds On (Max) @ Id, Vgs | 348mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id | 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs | 374nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 10300pF @ 25V |
Power - Max | 780W |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | SP4 |
Supplier Device Package | SP4 |
The Products You May Be Interested In
Diodes Incorporated Manufacturer Diodes Incorporated Series - FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 3.8A, 2.5A Rds On (Max) @ Id, Vgs 55mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 422pF @ 15V Power - Max 850mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-23-6 Thin, TSOT-23-6 Supplier Device Package TSOT-26 |
Toshiba Semiconductor and Storage Manufacturer Toshiba Semiconductor and Storage Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 100mA Rds On (Max) @ Id, Vgs 3.2Ohm @ 10mA, 4V Vgs(th) (Max) @ Id 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 15.1pF @ 3V Power - Max 300mW Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package US6 |
Diodes Incorporated Manufacturer Diodes Incorporated Series * FET Type - FET Feature - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Infineon Technologies Manufacturer Infineon Technologies Series HEXFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 5.1A Rds On (Max) @ Id, Vgs 50mOhm @ 5.1A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 780pF @ 25V Power - Max 2.4W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Diodes Incorporated Manufacturer Diodes Incorporated Series - FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 220mA, 200mA Rds On (Max) @ Id, Vgs 1.5Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.38nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 22.6pF @ 15V Power - Max 350mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-963 Supplier Device Package SOT-963 |