Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
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Transistors - Bipolar (BJT) - Single (13,715)
Transistors - Bipolar (BJT) - Single, Pre-Biased (3,282)
Transistors - FETs, MOSFETs - Arrays (3,829)
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Transistors - FETs, MOSFETs - Single (29,970)
Transistors - IGBTs - Arrays (18)
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Transistors - Special Purpose (162)

Records 64,903

Page 1920/2164

Part Number	Description	In Stock
TSM10N60CZ C0 Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45.8nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1738pF @ 25V FET Feature: - Power Dissipation (Max): 166W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock3,580
TSM10N60CZ C0G Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45.8nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1738pF @ 25V FET Feature: - Power Dissipation (Max): 166W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock7,542
TSM10N80CI C0G Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 9.5A ITO220 Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.05Ohm @ 4.75A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2336pF @ 25V FET Feature: - Power Dissipation (Max): 48W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220AB Package / Case: TO-220-3 Full Pack, Isolated Tab	In Stock21,648
TSM10N80CZ C0G Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 9.5A TO220 Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.05Ohm @ 4.75A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2336pF @ 25V FET Feature: - Power Dissipation (Max): 48W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock21,996
TSM10NB60CI C0G Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 10A ITO220 Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 25V FET Feature: - Power Dissipation (Max): 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220AB Package / Case: TO-220-3 Full Pack, Isolated Tab	In Stock5,832
TSM10NC60CF C0G Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 10A ITO220S Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 750mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1652pF @ 50V FET Feature: - Power Dissipation (Max): 45W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220S Package / Case: TO-220-3 Full Pack	In Stock6,768
TSM10NC65CF C0G Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 10A ITO220S Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 900mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 50V FET Feature: - Power Dissipation (Max): 45W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220S Package / Case: TO-220-3 Full Pack	In Stock20,148
TSM110NB04CR RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET SINGLE N-CHANNEL TRENCH Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1443pF @ 20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 68W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock20,304
TSM110NB04LCR RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET SINGLE N-CHANNEL TRENCH Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1269pF @ 20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 68W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock23,676
TSM120N06LCP ROG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 60V 70A TO252 Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2118pF @ 30V FET Feature: - Power Dissipation (Max): 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock346,584
TSM120N06LCR RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 54A 8PDFN Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2116pF @ 30V FET Feature: - Power Dissipation (Max): 69W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock5,040
TSM120N06LCS RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 60V 23A 8SOP Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2193pF @ 30V FET Feature: - Power Dissipation (Max): 12.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock58,332
TSM120N10PQ56 RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 58A 8PDFN Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3902pF @ 30V FET Feature: - Power Dissipation (Max): 36W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock8,550
TSM120NA03CR RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 39A 8PDFN Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 11.7mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 562pF @ 15V FET Feature: - Power Dissipation (Max): 33W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock2,358
TSM126CX RFG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 30MA SOT23 Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Rds On (Max) @ Id, Vgs: 800Ohm @ 16mA, 10V Vgs(th) (Max) @ Id: 1V @ 8µA Gate Charge (Qg) (Max) @ Vgs: 1.18nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 51.42pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock7,092
TSM130NB06CR RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET SINGLE N-CHANNEL TRENCH Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2380pF @ 30V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 83W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock21,330
TSM130NB06LCR Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single 60V 51A 13MO N-CHANNEL POWER MOS Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2175pF @ 30V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 83W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock6,408
TSM130NB06LCR RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET SINGLE N-CHANNEL TRENCH Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2175pF @ 30V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 83W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock21,960
TSM13N50ACI C0G Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 13A ITO220 Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 480mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1965pF @ 25V FET Feature: - Power Dissipation (Max): 52W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220AB Package / Case: TO-220-3 Full Pack, Isolated Tab	In Stock7,920
TSM13N50ACZ C0G Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 500V 13A TO220 Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 480mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1965pF @ 25V FET Feature: - Power Dissipation (Max): 52W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock2,934
TSM13ND50CI Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single 500V 13A SINGLE N-CHANNEL POWER Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 480mOhm @ 3.3A, 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1877pF @ 50V FET Feature: - Power Dissipation (Max): 57W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220 Package / Case: TO-220-3 Full Pack, Isolated Tab	In Stock31,842
TSM150NB04CR RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET SINGLE N-CHANNEL TRENCH Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1092pF @ 20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 56W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock24,912
TSM150NB04LCR RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET SINGLE N-CHANNEL TRENCH Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 966pF @ 20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 56W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock23,754
TSM150P03PQ33 RGG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 36A 8PDFN Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29.3nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1829pF @ 15V FET Feature: - Power Dissipation (Max): 27.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (3x3) Package / Case: 8-PowerWDFN	In Stock8,802
TSM150P04LCS RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL 40V 22A 8SOP Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2783pF @ 20V FET Feature: - Power Dissipation (Max): 12.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock49,836
TSM15N50CI C0G Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 14A ITO220 Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 440mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2263pF @ 25V FET Feature: - Power Dissipation (Max): - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220AB Package / Case: TO-220-3 Full Pack, Isolated Tab	In Stock23,604
TSM15N50CZ C0G Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 500V 14A TO220 Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 440mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2263pF @ 25V FET Feature: - Power Dissipation (Max): - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock18,648
TSM160N10CZ C0G Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 160A TO220 Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 9840pF @ 30V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock29,970
TSM160N10LCR RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 46A 8PDFN Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4431pF @ 50V FET Feature: - Power Dissipation (Max): 83W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock51,060
TSM160P02CS RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL 20V 11A 8SOP Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 16mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 15V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock3,240

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