Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
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Transistors - Bipolar (BJT) - Single (13,715)
Transistors - Bipolar (BJT) - Single, Pre-Biased (3,282)
Transistors - FETs, MOSFETs - Arrays (3,829)
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Records 64,903

Page 1918/2164

Part Number	Description	In Stock
TPN6R303NC,LQ Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N CH 30V 20A 8TSON-ADV Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVIII FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.3mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.3V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 15V FET Feature: - Power Dissipation (Max): 700mW (Ta), 19W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	In Stock7,794
TPN7R506NH,L1Q Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 26A 8TSON Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVIII-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 4V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 30V FET Feature: - Power Dissipation (Max): 700mW (Ta), 42W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	In Stock6,588
TPN8R903NL,LQ Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 20A TSON Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVIII-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.3V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V FET Feature: - Power Dissipation (Max): 700mW (Ta), 22W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	In Stock8,982
TPS1100D Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET P-CH 15V 1.6A 8-SOIC Manufacturer: Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 15V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V Vgs (Max): +2V, -15V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 791mW (Ta) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock9,000
TPS1100DR Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET P-CH 15V 1.6A 8-SOIC Manufacturer: Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 15V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V Vgs (Max): +2V, -15V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 791mW (Ta) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock7,434
TPS1100PW Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET P-CH 15V 1.27A 8-TSSOP Manufacturer: Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 15V Current - Continuous Drain (Id) @ 25°C: 1.27A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V Vgs (Max): +2V, -15V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 504mW (Ta) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	In Stock2,106
TPS1100PWR Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET P-CH 15V 1.27A 8-TSSOP Manufacturer: Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 15V Current - Continuous Drain (Id) @ 25°C: 1.27A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V Vgs (Max): +2V, -15V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 504mW (Ta) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	In Stock6,822
TPS1101D Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET P-CH 15V 2.3A 8-SOIC Manufacturer: Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 15V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.25nC @ 10V Vgs (Max): +2V, -15V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 791mW (Ta) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock12,804
TPS1101DR Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET P-CH 15V 2.3A 8-SOIC Manufacturer: Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 15V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.25nC @ 10V Vgs (Max): +2V, -15V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 791mW (Ta) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock8,640
TPS1101PWR Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET P-CH 15V 2.18A 16-TSSOP Manufacturer: Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 15V Current - Continuous Drain (Id) @ 25°C: 2.18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.25nC @ 10V Vgs (Max): +2V, -15V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 710mW (Ta) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 16-TSSOP Package / Case: 16-TSSOP (0.173", 4.40mm Width)	In Stock5,256
TPW1R005PL,L1Q Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single X35 PB-F POWER MOSFET TRANSISTOR Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSIX-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 9600pF @ 22.5V FET Feature: - Power Dissipation (Max): 960mW (Ta), 170W (Tc) Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 8-DSOP Advance Package / Case: 8-PowerVDFN	In Stock8,694
TPW1R306PL,L1Q Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single X35 PB-F POWER MOSFET TRANSISTOR Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSIX-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 260A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.29mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8100pF @ 30V FET Feature: - Power Dissipation (Max): 960mW (Ta), 170W (Tc) Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 8-DSOP Advance Package / Case: 8-PowerVDFN	In Stock42,594
TPW4R008NH,L1Q Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 116A 8DSOP Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVIII-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 116A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 40V FET Feature: - Power Dissipation (Max): 800mW (Ta), 142W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DSOP Advance Package / Case: 8-PowerVDFN	In Stock4,662
TPW4R50ANH,L1Q Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 92A 8DSOP Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVIII-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 92A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.5mOhm @ 46A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 50V FET Feature: - Power Dissipation (Max): 800mW (Ta), 142W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DSOP Advance Package / Case: 8-PowerVDFN	In Stock47,010
TPWR8004PL,L1Q Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 150A 8DSOP Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSIX-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 9600pF @ 20V FET Feature: - Power Dissipation (Max): 1W (Ta), 170W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DSOP Advance Package / Case: 8-PowerVDFN	In Stock6,210
TPWR8503NL,L1Q Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 150A 8DSOP Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVIII-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 15V FET Feature: - Power Dissipation (Max): 800mW (Ta), 142W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DSOP Advance Package / Case: 8-PowerVDFN	In Stock3,870
TSM015NA03CR RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 205A 8PDFN Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 205A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.5mOhm @ 32A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4243pF @ 15V FET Feature: - Power Dissipation (Max): 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock24,570
TSM018NA03CR RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 185A 8PDFN Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 185A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.8mOhm @ 29A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3479pF @ 15V FET Feature: - Power Dissipation (Max): 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock24,432
TSM020N04LCR RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 170A 8PDFN Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2mOhm @ 27A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7942pF @ 20V FET Feature: - Power Dissipation (Max): 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock47,658
TSM024NA04LCR RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 170A 8PDFN Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4224pF @ 20V FET Feature: - Power Dissipation (Max): 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock21,972
TSM025NB04CR RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET SINGLE N-CHANNEL TRENCH Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 161A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.5mOhm @ 24A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7150pF @ 20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 136W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock24,270
TSM025NB04LCR RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET SINGLE N-CHANNEL TRENCH Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 161A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.5mOhm @ 24A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6435pF @ 20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 136W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock23,988
TSM026NA03CR RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 168A 8PDFN Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 168A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 24A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2540pF @ 15V FET Feature: - Power Dissipation (Max): 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock26,862
TSM033NA03CR RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 129A 8PDFN Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 129A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 15V FET Feature: - Power Dissipation (Max): 96W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock6,606
TSM033NA04LCR RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 141A 8PDFN Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 141A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3130pF @ 20V FET Feature: - Power Dissipation (Max): 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock26,700
TSM033NB04CR RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET SINGLE N-CHANNEL TRENCH Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5022pF @ 20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 107W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock20,814
TSM033NB04LCR RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET SINGLE N-CHANNEL TRENCH Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 79nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4456pF @ 20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 107W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock20,148
TSM036N03PQ56 RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 124A 8PDFN Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.6mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 15V FET Feature: - Power Dissipation (Max): 83W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock22,446
TSM038N03PQ33 RGG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 78A 8PDFN Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2557pF @ 15V FET Feature: - Power Dissipation (Max): 39W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (3x3) Package / Case: 8-PowerWDFN	In Stock7,020
TSM038N04LCP ROG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 40V 135A TO252 Manufacturer: Taiwan Semiconductor Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 135A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5509pF @ 20V FET Feature: - Power Dissipation (Max): 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock7,434

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