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TSM10N60CZ C0G

TSM10N60CZ C0G

For Reference Only

Part Number TSM10N60CZ C0G
PNEDA Part # TSM10N60CZ-C0G
Description MOSFET N-CHANNEL
Manufacturer Taiwan Semiconductor Corporation
Unit Price Request a Quote
In Stock 7,542
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TSM10N60CZ C0G Resources

Brand Taiwan Semiconductor Corporation
ECAD Module ECAD
Mfr. Part NumberTSM10N60CZ C0G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
TSM10N60CZ C0G, TSM10N60CZ C0G Datasheet (Total Pages: 9, Size: 2,438.22 KB)
PDFTSM10N60CZ C0G Datasheet Cover
TSM10N60CZ C0G Datasheet Page 2 TSM10N60CZ C0G Datasheet Page 3 TSM10N60CZ C0G Datasheet Page 4 TSM10N60CZ C0G Datasheet Page 5 TSM10N60CZ C0G Datasheet Page 6 TSM10N60CZ C0G Datasheet Page 7 TSM10N60CZ C0G Datasheet Page 8 TSM10N60CZ C0G Datasheet Page 9

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TSM10N60CZ C0G Specifications

ManufacturerTaiwan Semiconductor Corporation
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs750mOhm @ 5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs45.8nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1738pF @ 25V
FET Feature-
Power Dissipation (Max)166W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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