TSM120N06LCS RLG
For Reference Only
| Part Number | TSM120N06LCS RLG |
| PNEDA Part # | TSM120N06LCS-RLG |
| Description | MOSFET N-CHANNEL 60V 23A 8SOP |
| Manufacturer | Taiwan Semiconductor Corporation |
| Unit Price | Request a Quote |
| In Stock | 58,332 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 19 - Mar 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
TSM120N06LCS RLG Resources
| Brand | Taiwan Semiconductor Corporation |
| ECAD Module |
|
| Mfr. Part Number | TSM120N06LCS RLG |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- TSM120N06LCS RLG Datasheet
- where to find TSM120N06LCS RLG
- Taiwan Semiconductor Corporation
- Taiwan Semiconductor Corporation TSM120N06LCS RLG
- TSM120N06LCS RLG PDF Datasheet
- TSM120N06LCS RLG Stock
- TSM120N06LCS RLG Pinout
- Datasheet TSM120N06LCS RLG
- TSM120N06LCS RLG Supplier
- Taiwan Semiconductor Corporation Distributor
- TSM120N06LCS RLG Price
- TSM120N06LCS RLG Distributor
TSM120N06LCS RLG Specifications
| Manufacturer | Taiwan Semiconductor Corporation |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 37nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2193pF @ 30V |
| FET Feature | - |
| Power Dissipation (Max) | 12.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOP |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
The Products You May Be Interested In
|
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 20A (Ta), 93A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.7mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 33.7nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2164pF @ 25V FET Feature - Power Dissipation (Max) 3.7W (Ta), 79W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN |
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 310mOhm @ 6A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18.5nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1134pF @ 25V FET Feature - Power Dissipation (Max) 180W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 120V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5.1mOhm @ 100A, 10V Vgs(th) (Max) @ Id 4V @ 240µA Gate Charge (Qg) (Max) @ Vgs 185nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 11570pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO263-3 Package / Case TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 40A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.35mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2.1V @ 100µA Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3520pF @ 13V FET Feature - Power Dissipation (Max) 3.6W (Ta), 96W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PQFN (5x6) Package / Case 8-PowerTDFN |
Manufacturer Comchip Technology Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 70A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 8.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 19.7nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1278pF @ 25V FET Feature - Power Dissipation (Max) 2W (Ta), 72.3W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DFN5x6 (PR-PAK) Package / Case 8-PowerTDFN |
