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TPCA8A01-H(TE12L,Q

TPCA8A01-H(TE12L,Q

For Reference Only

Part Number TPCA8A01-H(TE12L,Q
PNEDA Part # TPCA8A01-H-TE12L-Q
Description MOSFET N-CH 30V 36A SOP8 ADV
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 7,056
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TPCA8A01-H(TE12L Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTPCA8A01-H(TE12L,Q
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
TPCA8A01-H(TE12L, TPCA8A01-H(TE12L Datasheet (Total Pages: 8, Size: 223.71 KB)
PDFTPCA8A01-H(TE12L Datasheet Cover
TPCA8A01-H(TE12L Datasheet Page 2 TPCA8A01-H(TE12L Datasheet Page 3 TPCA8A01-H(TE12L Datasheet Page 4 TPCA8A01-H(TE12L Datasheet Page 5 TPCA8A01-H(TE12L Datasheet Page 6 TPCA8A01-H(TE12L Datasheet Page 7 TPCA8A01-H(TE12L Datasheet Page 8

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TPCA8A01-H(TE12L Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C36A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.6mOhm @ 18A, 10V
Vgs(th) (Max) @ Id2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1970pF @ 10V
FET Feature-
Power Dissipation (Max)1.6W (Ta), 45W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOP Advance (5x5)
Package / Case8-PowerVDFN

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