Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

TPCA8A01-H(TE12L,Q

TPCA8A01-H(TE12L,Q

For Reference Only

Part Number TPCA8A01-H(TE12L,Q
PNEDA Part # TPCA8A01-H-TE12L-Q
Description MOSFET N-CH 30V 36A SOP8 ADV
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 7,056
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 23 - Mar 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TPCA8A01-H(TE12L Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTPCA8A01-H(TE12L,Q
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
TPCA8A01-H(TE12L, TPCA8A01-H(TE12L Datasheet (Total Pages: 8, Size: 223.71 KB)
PDFTPCA8A01-H(TE12L Datasheet Cover
TPCA8A01-H(TE12L Datasheet Page 2 TPCA8A01-H(TE12L Datasheet Page 3 TPCA8A01-H(TE12L Datasheet Page 4 TPCA8A01-H(TE12L Datasheet Page 5 TPCA8A01-H(TE12L Datasheet Page 6 TPCA8A01-H(TE12L Datasheet Page 7 TPCA8A01-H(TE12L Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • TPCA8A01-H(TE12L,Q Datasheet
  • where to find TPCA8A01-H(TE12L,Q
  • Toshiba Semiconductor and Storage

  • Toshiba Semiconductor and Storage TPCA8A01-H(TE12L,Q
  • TPCA8A01-H(TE12L,Q PDF Datasheet
  • TPCA8A01-H(TE12L,Q Stock

  • TPCA8A01-H(TE12L,Q Pinout
  • Datasheet TPCA8A01-H(TE12L,Q
  • TPCA8A01-H(TE12L,Q Supplier

  • Toshiba Semiconductor and Storage Distributor
  • TPCA8A01-H(TE12L,Q Price
  • TPCA8A01-H(TE12L,Q Distributor

TPCA8A01-H(TE12L Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C36A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.6mOhm @ 18A, 10V
Vgs(th) (Max) @ Id2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1970pF @ 10V
FET Feature-
Power Dissipation (Max)1.6W (Ta), 45W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOP Advance (5x5)
Package / Case8-PowerVDFN

The Products You May Be Interested In

FQPF9N25CT

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

8.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

430mOhm @ 4.4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

710pF @ 25V

FET Feature

-

Power Dissipation (Max)

38W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

FQD7P06TM_NB82050

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

5.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

451mOhm @ 2.7A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.2nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

295pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 28W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

BSP317PL6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

430mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4Ohm @ 430mA, 10V

Vgs(th) (Max) @ Id

2V @ 370µA

Gate Charge (Qg) (Max) @ Vgs

15.1nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

262pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT223-4

Package / Case

TO-261-4, TO-261AA

IRFR120PBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

7.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

270mOhm @ 4.6A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

360pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 42W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

BUZ31 E3045A

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

14.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

200mOhm @ 9A, 5V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1120pF @ 25V

FET Feature

-

Power Dissipation (Max)

95W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

STM32F777BIT6

STM32F777BIT6

STMicroelectronics

IC MCU 32BIT 2MB FLASH 208LQFP

M74HC390B1R

M74HC390B1R

STMicroelectronics

IC DECADE COUNTER DUAL 16-DIP

MBT3904DW1T1G

MBT3904DW1T1G

ON Semiconductor

TRANS 2NPN 40V 0.2A SC88

SQ3427EEV-T1-GE3

SQ3427EEV-T1-GE3

Vishay Siliconix

MOSFET P-CH 60V 5.5A 6TSOP

LTST-C150KFKT

LTST-C150KFKT

Lite-On Inc.

LED ORANGE CLEAR 1206 SMD

DN2540N8-G

DN2540N8-G

Microchip Technology

MOSFET N-CH 400V 0.17A SOT89-3

HA7-5147-2

HA7-5147-2

Renesas Electronics America Inc.

IC OPAMP GP 1 CIRCUIT 8CERDIP

TAJE477K010RNJ

TAJE477K010RNJ

CAP TANT 470UF 10% 10V 2917

B3S-1000P

B3S-1000P

Omron Electronics Inc-EMC Div

SWITCH TACTILE SPST-NO 0.05A 24V

SI4836DY-T1-E3

SI4836DY-T1-E3

Vishay Siliconix

MOSFET N-CH 12V 17A 8-SOIC

ADV7123SCP170EP-RL

ADV7123SCP170EP-RL

Analog Devices

IC DAC 10BIT A-OUT 48LQFP

CPH3225A

CPH3225A

Seiko Instruments

CAP 11MF 3.3V SURFACE MOUNT