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TPCC8009,LQ(O

TPCC8009,LQ(O

For Reference Only

Part Number TPCC8009,LQ(O
PNEDA Part # TPCC8009-LQ-O
Description MOSFET N-CH 30V 24A 8TSON-ADV
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 5,760
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TPCC8009 Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTPCC8009,LQ(O
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
TPCC8009, TPCC8009 Datasheet (Total Pages: 63, Size: 1,617.96 KB)
PDFTPCP8203(TE85L Datasheet Cover
TPCP8203(TE85L Datasheet Page 2 TPCP8203(TE85L Datasheet Page 3 TPCP8203(TE85L Datasheet Page 4 TPCP8203(TE85L Datasheet Page 5 TPCP8203(TE85L Datasheet Page 6 TPCP8203(TE85L Datasheet Page 7 TPCP8203(TE85L Datasheet Page 8 TPCP8203(TE85L Datasheet Page 9 TPCP8203(TE85L Datasheet Page 10 TPCP8203(TE85L Datasheet Page 11

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TPCC8009 Specifications

ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSIV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C24A (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs7mOhm @ 12A, 10V
Vgs(th) (Max) @ Id3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs26nC @ 10V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds1270pF @ 10V
FET Feature-
Power Dissipation (Max)-
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-TSON Advance (3.3x3.3)
Package / Case8-PowerVDFN

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