Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 1907/2164

Part Number	Description	In Stock
TK72A08N1,S4X Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 80A TO220SIS Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVIII-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.5mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 175nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8200pF @ 10V FET Feature: - Power Dissipation (Max): 45W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	In Stock9,804
TK72A12N1,S4X Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 120V 72A TO-220 Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVIII-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.5mOhm @ 36A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8100pF @ 60V FET Feature: - Power Dissipation (Max): 45W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	In Stock7,920
TK72E08N1,S1X Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N CH 80V 72A TO-220 Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVIII-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 72A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.3mOhm @ 36A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 40V FET Feature: - Power Dissipation (Max): 192W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock2,376
TK72E12N1,S1X Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N CH 120V 72A TO-220 Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVIII-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 72A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.4mOhm @ 36A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8100pF @ 60V FET Feature: - Power Dissipation (Max): 255W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	In Stock5,508
TK750A60F,S4X Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single PB-F POWER MOSFET TRANSISTOR TO- Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSIX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 300V FET Feature: - Power Dissipation (Max): 40W (Tc) Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	In Stock6,030
TK7A45DA(STA4,Q,M) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 450V 6.5A TO-220SIS Manufacturer: Toshiba Semiconductor and Storage Series: π-MOSVII FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.3A, 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V FET Feature: - Power Dissipation (Max): 35W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	In Stock7,830
TK7A50D(STA4,Q,M) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 7A TO-220SIS Manufacturer: Toshiba Semiconductor and Storage Series: π-MOSVII FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.22Ohm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V FET Feature: - Power Dissipation (Max): 35W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	In Stock7,452
TK7A55D(STA4,Q,M) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 550V 7A TO-220SIS Manufacturer: Toshiba Semiconductor and Storage Series: π-MOSVII FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V FET Feature: - Power Dissipation (Max): 35W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	In Stock8,424
TK7A60W5,S5VX Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 7A TO-220SIS Manufacturer: Toshiba Semiconductor and Storage Series: DTMOSIV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 300V FET Feature: - Power Dissipation (Max): 30W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	In Stock6,426
TK7A60W,S4VX Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N CH 600V 7A TO-220SIS Manufacturer: Toshiba Semiconductor and Storage Series: DTMOSIV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 3.7V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 300V FET Feature: Super Junction Power Dissipation (Max): 30W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	In Stock7,506
TK7A65D(STA4,Q,M) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 7A TO-220SIS Manufacturer: Toshiba Semiconductor and Storage Series: π-MOSVII FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 980mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V FET Feature: - Power Dissipation (Max): 45W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	In Stock2,718
TK7A65W,S5X Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 6.8A TO-220SIS Manufacturer: Toshiba Semiconductor and Storage Series: DTMOSIV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 780mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 300V FET Feature: - Power Dissipation (Max): 30W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	In Stock3,580
TK7A90E,S4X Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V TO220SIS Manufacturer: Toshiba Semiconductor and Storage Series: π-MOSVIII FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2Ohm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V FET Feature: - Power Dissipation (Max): 45W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	In Stock8,460
TK7E80W,S1X Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 6.5A TO220 Manufacturer: Toshiba Semiconductor and Storage Series: DTMOSIV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 950mOhm @ 3.3A, 10V Vgs(th) (Max) @ Id: 4V @ 280µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 300V FET Feature: - Power Dissipation (Max): 110W (Tc) Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock6,840
TK7J90E,S1E Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V TO-3PN Manufacturer: Toshiba Semiconductor and Storage Series: π-MOSVIII FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2Ohm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V FET Feature: - Power Dissipation (Max): 200W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P(N) Package / Case: TO-3P-3, SC-65-3	In Stock6,072
TK7P50D(T6RSS-Q) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 7A DPAK-3 Manufacturer: Toshiba Semiconductor and Storage Series: π-MOSVII FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.22Ohm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V FET Feature: - Power Dissipation (Max): 100W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock8,712
TK7P60W5,RVQ Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 7A DPAK Manufacturer: Toshiba Semiconductor and Storage Series: DTMOSIV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 670mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 300V FET Feature: Super Junction Power Dissipation (Max): 60W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock2,178
TK7P60W,RVQ Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N CH 600V 7A DPAK Manufacturer: Toshiba Semiconductor and Storage Series: DTMOSIV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 3.7V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 300V FET Feature: Super Junction Power Dissipation (Max): 60W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock6,894
TK7P65W,RQ Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 6.8A DPAK Manufacturer: Toshiba Semiconductor and Storage Series: DTMOSIV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 800mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 300V FET Feature: - Power Dissipation (Max): 60W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock4,068
TK7Q60W,S1VQ Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 7A IPAK-3 Manufacturer: Toshiba Semiconductor and Storage Series: DTMOSIV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 3.7V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 300V FET Feature: - Power Dissipation (Max): 60W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Stub Leads, IPak	In Stock2,466
TK7S10N1Z,LQ Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 7A DPAK Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSVIII-H FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 48mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V FET Feature: - Power Dissipation (Max): 50W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock22,512
TK80S04K3L(T6L1,NQ Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 80A DPAK-3 Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSIV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3.1mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 10V FET Feature: - Power Dissipation (Max): 100W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock6,858
TK80S06K3L(T6L1,NQ Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 80A DPAK-3 Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSIV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 10V FET Feature: - Power Dissipation (Max): 100W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock7,956
TK8A10K3,S5Q Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 8A TO-220SIS Manufacturer: Toshiba Semiconductor and Storage Series: U-MOSIV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V FET Feature: - Power Dissipation (Max): 18W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	In Stock7,866
TK8A45DA(STA4,Q,M) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 450V 7.5A TO-220SIS Manufacturer: Toshiba Semiconductor and Storage Series: π-MOSVII FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	In Stock3,492
TK8A45D(STA4,Q,M) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 450V 8A TO-220SIS Manufacturer: Toshiba Semiconductor and Storage Series: π-MOSVII FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V FET Feature: - Power Dissipation (Max): 35W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	In Stock6,588
TK8A50DA(STA4,Q,M) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 7.5A TO-220SIS Manufacturer: Toshiba Semiconductor and Storage Series: π-MOSVII FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.04Ohm @ 3.8A, 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V FET Feature: - Power Dissipation (Max): 35W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	In Stock3,526
TK8A50D(STA4,Q,M) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 8A TO220SIS Manufacturer: Toshiba Semiconductor and Storage Series: π-MOSVII FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V FET Feature: - Power Dissipation (Max): 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	In Stock7,920
TK8A55DA(STA4,Q,M) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 550V 7.5A TO-220SIS Manufacturer: Toshiba Semiconductor and Storage Series: π-MOSVII FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.07Ohm @ 3.8A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V FET Feature: - Power Dissipation (Max): 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	In Stock6,426
TK8A60DA(STA4,Q,M) Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 7.5A TO-220SIS Manufacturer: Toshiba Semiconductor and Storage Series: π-MOSVII FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1Ohm @ 4A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V FET Feature: - Power Dissipation (Max): 45W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	In Stock5,814

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