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TK7S10N1Z,LQ

TK7S10N1Z,LQ

For Reference Only

Part Number TK7S10N1Z,LQ
PNEDA Part # TK7S10N1Z-LQ
Description MOSFET N-CH 100V 7A DPAK
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 22,512
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TK7S10N1Z Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTK7S10N1Z,LQ
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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TK7S10N1Z Specifications

ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSVIII-H
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs48mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs7.1nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds470pF @ 10V
FET Feature-
Power Dissipation (Max)50W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK+
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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