Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

TK4A55DA(STA4,Q,M)

TK4A55DA(STA4,Q,M)

For Reference Only

Part Number TK4A55DA(STA4,Q,M)
PNEDA Part # TK4A55DA-STA4-Q-M
Description MOSFET N-CH 550V 3.5A TO-220SIS
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 8,370
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 19 - Mar 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TK4A55DA(STA4 Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTK4A55DA(STA4,Q,M)
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • TK4A55DA(STA4,Q,M) Datasheet
  • where to find TK4A55DA(STA4,Q,M)
  • Toshiba Semiconductor and Storage

  • Toshiba Semiconductor and Storage TK4A55DA(STA4,Q,M)
  • TK4A55DA(STA4,Q,M) PDF Datasheet
  • TK4A55DA(STA4,Q,M) Stock

  • TK4A55DA(STA4,Q,M) Pinout
  • Datasheet TK4A55DA(STA4,Q,M)
  • TK4A55DA(STA4,Q,M) Supplier

  • Toshiba Semiconductor and Storage Distributor
  • TK4A55DA(STA4,Q,M) Price
  • TK4A55DA(STA4,Q,M) Distributor

TK4A55DA(STA4 Specifications

ManufacturerToshiba Semiconductor and Storage
Seriesπ-MOSVII
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)550V
Current - Continuous Drain (Id) @ 25°C3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.45Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs9nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds380pF @ 25V
FET Feature-
Power Dissipation (Max)30W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220SIS
Package / CaseTO-220-3 Full Pack

The Products You May Be Interested In

SI1054X-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

95mOhm @ 1.32A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.57nC @ 5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

480pF @ 6V

FET Feature

-

Power Dissipation (Max)

236mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-89-6

Package / Case

SOT-563, SOT-666

NTD25P03L1

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

25A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 5V

Rds On (Max) @ Id, Vgs

80mOhm @ 25A, 5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 5V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

1260pF @ 25V

FET Feature

-

Power Dissipation (Max)

75W (Tj)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

NX138BKVL

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

265mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

3.5Ohm @ 200mA, 10V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.49nC @ 30V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

20.2pF @ 30V

FET Feature

-

Power Dissipation (Max)

310mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-236AB

Package / Case

TO-236-3, SC-59, SOT-23-3

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

4500V

Current - Continuous Drain (Id) @ 25°C

200mA (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

750Ohm @ 10mA, 10V

Vgs(th) (Max) @ Id

6.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10.4nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

256pF @ 25V

FET Feature

-

Power Dissipation (Max)

113W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (IXTA)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

APT60M75L2LLG

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 7®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

73A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

75mOhm @ 36.5A, 10V

Vgs(th) (Max) @ Id

5V @ 5mA

Gate Charge (Qg) (Max) @ Vgs

195nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

8930pF @ 25V

FET Feature

-

Power Dissipation (Max)

893W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

264 MAX™ [L2]

Package / Case

TO-264-3, TO-264AA

Recently Sold

MCP1826-3302E/ET

MCP1826-3302E/ET

Microchip Technology

IC REG LINEAR 3.3V 1A 5DDPAK

9ZXL0831EKILF

9ZXL0831EKILF

IDT, Integrated Device Technology

DB800ZL

EP3C16F484I7N

EP3C16F484I7N

Intel

IC FPGA 346 I/O 484FBGA

NTR4171PT1G

NTR4171PT1G

ON Semiconductor

MOSFET P-CH 30V 2.2A SOT23

XC3S500E-4VQG100I

XC3S500E-4VQG100I

Xilinx

IC FPGA 66 I/O 100VQFP

BR24T16F-WE2

BR24T16F-WE2

Rohm Semiconductor

IC EEPROM 16K I2C 400KHZ 8SOP

LTC4365ITS8#TRMPBF

LTC4365ITS8#TRMPBF

Linear Technology/Analog Devices

IC OVERVOLTAGE PROT TSOT23-8

SP3232EEN-L/TR

SP3232EEN-L/TR

MaxLinear, Inc.

IC TRANSCEIVER FULL 2/2 16SOIC

0ZCJ0025AF2E

0ZCJ0025AF2E

Bel Fuse

PTC RESET FUSE 24V 250MA 1206

TS4984IQT

TS4984IQT

STMicroelectronics

IC AMP AUDIO PWR 1.2W AB 16TQFN

A42MX16-FPLG84

A42MX16-FPLG84

Microsemi

IC FPGA 72 I/O 84PLCC

S25FL032P0XMFI001

S25FL032P0XMFI001

Cypress Semiconductor

IC FLASH 32M SPI 104MHZ 16SOIC