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Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

Transistors

Records 64,903
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Part Number
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SQJ488EP-T1_GE3
SQJ488EP-T1_GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V POWERPAK SO8L

  • Manufacturer: Vishay Siliconix
  • Series: Automotive, AEC-Q101, TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 979pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: 8-PowerTDFN
In Stock25,164
SQJ840EP-T1_GE3
SQJ840EP-T1_GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 30A PPAK SO-8

  • Manufacturer: Vishay Siliconix
  • Series: Automotive, AEC-Q101, TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 9.3mOhm @ 10.3A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 46W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock8,946
SQJ848EP-T1_GE3
SQJ848EP-T1_GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 47A POWERPAKSO-8

  • Manufacturer: Vishay Siliconix
  • Series: Automotive, AEC-Q101, TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10.3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 20V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock3,582
SQJ850EP-T1_GE3
SQJ850EP-T1_GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 24A

  • Manufacturer: Vishay Siliconix
  • Series: Automotive, AEC-Q101, TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 23mOhm @ 10.3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1225pF @ 30V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock50,928
SQJ858AEP-T1_GE3
SQJ858AEP-T1_GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 58A

  • Manufacturer: Vishay Siliconix
  • Series: Automotive, AEC-Q101, TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 20V
  • FET Feature: -
  • Power Dissipation (Max): 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock142,482
SQJ858EP-T1_GE3
SQJ858EP-T1_GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 75A POWERPAKSO-8

  • Manufacturer: Vishay Siliconix
  • Series: Automotive, AEC-Q101, TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 6mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 20V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock2,898
SQJ860EP-T1_GE3
SQJ860EP-T1_GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 60A POWERPAKSO-8

  • Manufacturer: Vishay Siliconix
  • Series: Automotive, AEC-Q101, TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock68,586
SQJ868EP-T1_GE3
SQJ868EP-T1_GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 58A POWERPAKSOL

  • Manufacturer: Vishay Siliconix
  • Series: Automotive, AEC-Q101, TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 7.35mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 20V
  • FET Feature: -
  • Power Dissipation (Max): 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock7,398
SQJ872EP-T1_GE3
SQJ872EP-T1_GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CHAN 150V

  • Manufacturer: Vishay Siliconix
  • Series: Automotive, AEC-Q101, TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 24.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Rds On (Max) @ Id, Vgs: 35.5mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1045pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 55W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: 8-PowerTDFN
In Stock3,726
SQJ886EP-T1_GE3
SQJ886EP-T1_GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 60A PPAK SO-8

  • Manufacturer: Vishay Siliconix
  • Series: Automotive, AEC-Q101, TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15.3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2922pF @ 20V
  • FET Feature: -
  • Power Dissipation (Max): 55W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock8,766
SQJA00EP-T1_GE3
SQJA00EP-T1_GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 30A POWERPAKSO-8

  • Manufacturer: Vishay Siliconix
  • Series: Automotive, AEC-Q101, TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock25,272
SQJA02EP-T1_GE3
SQJA02EP-T1_GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 60A POWERPAKSO-8

  • Manufacturer: Vishay Siliconix
  • Series: Automotive, AEC-Q101, TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 4.8mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock5,418
SQJA04EP-T1_GE3
SQJA04EP-T1_GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 75A POWERPAKSO-8

  • Manufacturer: Vishay Siliconix
  • Series: Automotive, AEC-Q101, TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 6.2mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock26,436
SQJA06EP-T1_GE3
SQJA06EP-T1_GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 57A POWERPAKSO-8

  • Manufacturer: Vishay Siliconix
  • Series: Automotive, AEC-Q101, TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 55W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock22,944
SQJA20EP-T1_GE3
SQJA20EP-T1_GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 200V PWRPAK SO-8L

  • Manufacturer: Vishay Siliconix
  • Series: Automotive, AEC-Q101, TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock2,100
SQJA34EP-T1_GE3
SQJA34EP-T1_GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 75A POWERPAKSOL

  • Manufacturer: Vishay Siliconix
  • Series: Automotive, AEC-Q101, TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock5,904
SQJA37EP-T1_GE3
SQJA37EP-T1_GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CHAN 30V PPAK SO-8L

  • Manufacturer: Vishay Siliconix
  • Series: Automotive, AEC-Q101, TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 9.2mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock4,194
SQJA38EP-T1_GE3
SQJA38EP-T1_GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 60A PP SO-8L

  • Manufacturer: Vishay Siliconix
  • Series: *
  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
In Stock2,574
SQJA42EP-T1_GE3
SQJA42EP-T1_GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH AUTO 40V PP SO-8

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 9.4mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 27W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock5,454
SQJA46EP-T1_GE3
SQJA46EP-T1_GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 60A POWERPAKSO-8

  • Manufacturer: Vishay Siliconix
  • Series: Automotive, AEC-Q101, TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock3,078
SQJA60EP-T1_GE3
SQJA60EP-T1_GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 30A POWERPAKSO-8

  • Manufacturer: Vishay Siliconix
  • Series: Automotive, AEC-Q101, TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock5,724
SQJA62EP-T1_GE3
SQJA62EP-T1_GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 60A POWERPAKSO-8

  • Manufacturer: Vishay Siliconix
  • Series: Automotive, AEC-Q101, TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock4,716
SQJA64EP-T1_GE3
SQJA64EP-T1_GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 15A POWERPAKSOL

  • Manufacturer: Vishay Siliconix
  • Series: Automotive, AEC-Q101, TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock6,156
SQJA68EP-T1_GE3
SQJA68EP-T1_GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 14A POWERPAKSO

  • Manufacturer: Vishay Siliconix
  • Series: Automotive, AEC-Q101, TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock25,092
SQJA70EP-T1_GE3
SQJA70EP-T1_GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 14.7A SO-8

  • Manufacturer: Vishay Siliconix
  • Series: Automotive, AEC-Q101, TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 14.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 95mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 27W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock5,274
SQJA72EP-T1_GE3
SQJA72EP-T1_GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CHAN 100V POWERPAK SO-8

  • Manufacturer: Vishay Siliconix
  • Series: Automotive, AEC-Q101, TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 55W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock5,742
SQJA76EP-T1_GE3
SQJA76EP-T1_GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CHAN 40V POWERPAK SO-8L

  • Manufacturer: Vishay Siliconix
  • Series: Automotive, AEC-Q101, TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.4mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5250pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: 8-PowerTDFN
In Stock3,492
SQJA78EP-T1_GE3
SQJA78EP-T1_GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V 72A PP SO-8L

  • Manufacturer: Vishay Siliconix
  • Series: *
  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
In Stock8,442
SQJA80EP-T1_GE3
SQJA80EP-T1_GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V 60A POWERPAKSO-8

  • Manufacturer: Vishay Siliconix
  • Series: Automotive, AEC-Q101, TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock3,762
SQJA82EP-T1_GE3
SQJA82EP-T1_GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V 60A POWERPAKSO-8

  • Manufacturer: Vishay Siliconix
  • Series: Automotive, AEC-Q101, TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 8.2mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
In Stock125,724