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SQJA42EP-T1_GE3

SQJA42EP-T1_GE3

For Reference Only

Part Number SQJA42EP-T1_GE3
PNEDA Part # SQJA42EP-T1_GE3
Description MOSFET N-CH AUTO 40V PP SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,454
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQJA42EP-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQJA42EP-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQJA42EP-T1_GE3, SQJA42EP-T1_GE3 Datasheet (Total Pages: 9, Size: 324.35 KB)
PDFSQJA42EP-T1_GE3 Datasheet Cover
SQJA42EP-T1_GE3 Datasheet Page 2 SQJA42EP-T1_GE3 Datasheet Page 3 SQJA42EP-T1_GE3 Datasheet Page 4 SQJA42EP-T1_GE3 Datasheet Page 5 SQJA42EP-T1_GE3 Datasheet Page 6 SQJA42EP-T1_GE3 Datasheet Page 7 SQJA42EP-T1_GE3 Datasheet Page 8 SQJA42EP-T1_GE3 Datasheet Page 9

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SQJA42EP-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs9.4mOhm @ 6A, 10V
Vgs(th) (Max) @ Id2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs33nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1700pF @ 25V
FET Feature-
Power Dissipation (Max)27W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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