Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SQJ886EP-T1_GE3

SQJ886EP-T1_GE3

For Reference Only

Part Number SQJ886EP-T1_GE3
PNEDA Part # SQJ886EP-T1_GE3
Description MOSFET N-CH 40V 60A PPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,766
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQJ886EP-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQJ886EP-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQJ886EP-T1_GE3, SQJ886EP-T1_GE3 Datasheet (Total Pages: 10, Size: 174.21 KB)
PDFSQJ886EP-T1_GE3 Datasheet Cover
SQJ886EP-T1_GE3 Datasheet Page 2 SQJ886EP-T1_GE3 Datasheet Page 3 SQJ886EP-T1_GE3 Datasheet Page 4 SQJ886EP-T1_GE3 Datasheet Page 5 SQJ886EP-T1_GE3 Datasheet Page 6 SQJ886EP-T1_GE3 Datasheet Page 7 SQJ886EP-T1_GE3 Datasheet Page 8 SQJ886EP-T1_GE3 Datasheet Page 9 SQJ886EP-T1_GE3 Datasheet Page 10

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SQJ886EP-T1_GE3 Datasheet
  • where to find SQJ886EP-T1_GE3
  • Vishay Siliconix

  • Vishay Siliconix SQJ886EP-T1_GE3
  • SQJ886EP-T1_GE3 PDF Datasheet
  • SQJ886EP-T1_GE3 Stock

  • SQJ886EP-T1_GE3 Pinout
  • Datasheet SQJ886EP-T1_GE3
  • SQJ886EP-T1_GE3 Supplier

  • Vishay Siliconix Distributor
  • SQJ886EP-T1_GE3 Price
  • SQJ886EP-T1_GE3 Distributor

SQJ886EP-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.5mOhm @ 15.3A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs65nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2922pF @ 20V
FET Feature-
Power Dissipation (Max)55W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

The Products You May Be Interested In

STP22NM60N

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

220mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

44nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 50V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

IRFZ30

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

50V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

50mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1600pF @ 25V

FET Feature

-

Power Dissipation (Max)

74W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

APT60M75L2FLLG

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 7®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

73A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

75mOhm @ 36.5A, 10V

Vgs(th) (Max) @ Id

5V @ 5mA

Gate Charge (Qg) (Max) @ Vgs

195nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

8930pF @ 25V

FET Feature

-

Power Dissipation (Max)

893W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

264 MAX™ [L2]

Package / Case

TO-264-3, TO-264AA

SSM3J145TU,LF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVI

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

103mOhm @ 1A, 4.5V

Vgs(th) (Max) @ Id

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

4.6nC @ 4.5V

Vgs (Max)

+6V, -8V

Input Capacitance (Ciss) (Max) @ Vds

270pF @ 10V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

150°C

Mounting Type

Surface Mount

Supplier Device Package

UFM

Package / Case

3-SMD, Flat Leads

Manufacturer

IXYS

Series

HiPerFET™, Polar3™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

210A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

14.5mOhm @ 105A, 10V

Vgs(th) (Max) @ Id

5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

268nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

16200pF @ 25V

FET Feature

-

Power Dissipation (Max)

1890W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PLUS264™

Package / Case

TO-264-3, TO-264AA

Recently Sold

MCP73862T-I/SL

MCP73862T-I/SL

Microchip Technology

IC LI-ION CTRLR 8.2/8.4V 16SOIC

ATSAM3X8EA-AU

ATSAM3X8EA-AU

Microchip Technology

IC MCU 32BIT 512KB FLASH 144LQFP

MLX90614ESF-DCI-000-SP

MLX90614ESF-DCI-000-SP

Melexis Technologies NV

SENSOR DGTL -40C-85C TO39

ADP191ACBZ-R7

ADP191ACBZ-R7

Analog Devices

IC CTLR HIGH LSIDE PWR SW 4WLCSP

ABM3B-25.000MHZ-B2-T

ABM3B-25.000MHZ-B2-T

Abracon

CRYSTAL 25.0000MHZ 18PF SMD

XC7Z020-2CLG484I

XC7Z020-2CLG484I

Xilinx

IC SOC CORTEX-A9 766MHZ 484BGA

MT25QU01GBBB8ESF-0SIT

MT25QU01GBBB8ESF-0SIT

Micron Technology Inc.

IC FLASH 1G SPI 166MHZ 16SOP2

A2557SLBTR-T

A2557SLBTR-T

Allegro MicroSystems, LLC

IC DRIVER QUAD 60V 300MA 16SOIC

PIC18F6520-I/PT

PIC18F6520-I/PT

Microchip Technology

IC MCU 8BIT 32KB FLASH 64TQFP

74HC04D

74HC04D

Toshiba Semiconductor and Storage

IC INVERTER 6CH 6-INP 14SOIC

IS82C52

IS82C52

Renesas Electronics America Inc.

IC PERIPH UART/BRG 16MHZ 28-PLCC

NLC453232T-150K-PF

NLC453232T-150K-PF

TDK

FIXED IND 15UH 450MA 700 MOHM