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SQJ858AEP-T1_GE3

SQJ858AEP-T1_GE3

For Reference Only

Part Number SQJ858AEP-T1_GE3
PNEDA Part # SQJ858AEP-T1_GE3
Description MOSFET N-CH 40V 58A
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 142,482
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQJ858AEP-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQJ858AEP-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQJ858AEP-T1_GE3, SQJ858AEP-T1_GE3 Datasheet (Total Pages: 10, Size: 173.45 KB)
PDFSQJ858AEP-T1_GE3 Datasheet Cover
SQJ858AEP-T1_GE3 Datasheet Page 2 SQJ858AEP-T1_GE3 Datasheet Page 3 SQJ858AEP-T1_GE3 Datasheet Page 4 SQJ858AEP-T1_GE3 Datasheet Page 5 SQJ858AEP-T1_GE3 Datasheet Page 6 SQJ858AEP-T1_GE3 Datasheet Page 7 SQJ858AEP-T1_GE3 Datasheet Page 8 SQJ858AEP-T1_GE3 Datasheet Page 9 SQJ858AEP-T1_GE3 Datasheet Page 10

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SQJ858AEP-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6.3mOhm @ 14A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs55nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2450pF @ 20V
FET Feature-
Power Dissipation (Max)48W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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