Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Transistors - Bipolar (BJT) - Single (13,715)
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Transistors - FETs, MOSFETs - Arrays (3,829)
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Records 64,903

Page 1765/2164

Part Number	Description	In Stock
SIHG61N65EF-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 64A TO247AC Manufacturer: Vishay Siliconix Series: E FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 47mOhm @ 30.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 371nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 7407pF @ 100V FET Feature: - Power Dissipation (Max): 520W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock8,628
SIHG64N65E-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 64A TO247AC Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 47mOhm @ 32A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 369nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 7497pF @ 100V FET Feature: - Power Dissipation (Max): 520W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock7,578
SIHG70N60AEF-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 60A TO247AC Manufacturer: Vishay Siliconix Series: EF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 410nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5348pF @ 100V FET Feature: - Power Dissipation (Max): 417W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock13,380
SIHG70N60EF-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 70A TO-247AC Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 38mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 100V FET Feature: - Power Dissipation (Max): 520W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock46,434
SIHG73N60AE-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 60A TO247AC Manufacturer: Vishay Siliconix Series: E FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 40mOhm @ 36.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 394nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 100V FET Feature: - Power Dissipation (Max): 417W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock17,736
SIHG73N60AEL-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CHAN 600V TO-247AC Manufacturer: Vishay Siliconix Series: EL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 69A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 42mOhm @ 36.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 342nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 6709pF @ 100V FET Feature: - Power Dissipation (Max): 520W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock6,024
SIHG73N60E-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 73A TO247AC Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 39mOhm @ 36A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 362nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 100V FET Feature: - Power Dissipation (Max): 520W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock6,300
SIHG73N60E-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 73A TO247AC Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 39mOhm @ 36A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 362nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 100V FET Feature: - Power Dissipation (Max): 520W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock9,684
SIHG80N60EF-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET E SERIES 600V TO247AC Manufacturer: Vishay Siliconix Series: EF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 32mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 400nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 100V FET Feature: - Power Dissipation (Max): 520W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock17,304
SIHG80N60E-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 80A TO247AC Manufacturer: Vishay Siliconix Series: E FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 443nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 100V FET Feature: - Power Dissipation (Max): 520W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock10,152
SIHH068N60E-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CHAN 600V POWERPAK 8X8 Manufacturer: Vishay Siliconix Series: E FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 68mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 100V FET Feature: - Power Dissipation (Max): 202W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 8 x 8 Package / Case: 8-PowerTDFN	In Stock6,048
SIHH100N60E-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET E SERIES 600V POWERPAK 8X Manufacturer: Vishay Siliconix Series: E FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 13.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 100V FET Feature: - Power Dissipation (Max): 174W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 8 x 8 Package / Case: 8-PowerTDFN	In Stock26,424
SIHH11N60EF-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 11A POWERPAK8X8 Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 357mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1078pF @ 100V FET Feature: - Power Dissipation (Max): 114W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 8 x 8 Package / Case: 8-PowerTDFN	In Stock25,920
SIHH11N60E-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 11A POWERPAK8X8 Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 339mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1076pF @ 100V FET Feature: - Power Dissipation (Max): 114W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 8 x 8 Package / Case: 8-PowerTDFN	In Stock5,220
SIHH11N65EF-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CHAN 600V 24A POWERPAK Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 382mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1243pF @ 100V FET Feature: - Power Dissipation (Max): 130W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 8 x 8 Package / Case: 8-PowerTDFN	In Stock29,460
SIHH11N65E-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CHAN 650V 12A POWERPAK Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 363mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1257pF @ 100V FET Feature: - Power Dissipation (Max): 130W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 8 x 8 Package / Case: 8-PowerTDFN	In Stock5,778
SIHH120N60E-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CHAN 600V PPAK 8X8 Manufacturer: Vishay Siliconix Series: E FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 100V FET Feature: - Power Dissipation (Max): 156W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 8 x 8 Package / Case: 8-PowerTDFN	In Stock4,968
SIHH125N60EF-T1GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH EF PWR PWRPAK 8X8 Manufacturer: Vishay Siliconix Series: EF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1533pF @ 100V FET Feature: - Power Dissipation (Max): 156W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 8 x 8 Package / Case: 8-PowerTDFN	In Stock6,822
SIHH14N60EF-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 15A POWERPAK8X8 Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 266mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1449pF @ 100V FET Feature: - Power Dissipation (Max): 147W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 8 x 8 Package / Case: 8-PowerTDFN	In Stock6,084
SIHH14N60E-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 16A POWERPAK8X8 Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 255mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1416pF @ 100V FET Feature: - Power Dissipation (Max): 147W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 8 x 8 Package / Case: 8-PowerTDFN	In Stock7,866
SIHH14N65EF-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CHAN 650V 15A POWERPAK Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 271mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1749pF @ 100V FET Feature: - Power Dissipation (Max): 156W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 8 x 8 Package / Case: 8-PowerTDFN	In Stock2,988
SIHH14N65E-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 15A PWRPAK 8X8 Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 260mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1712pF @ 100V FET Feature: - Power Dissipation (Max): 156W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 8 x 8 Package / Case: 8-PowerTDFN	In Stock29,640
SIHH180N60E-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH PPAK 8X8 Manufacturer: Vishay Siliconix Series: E FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1085pF @ 100V FET Feature: - Power Dissipation (Max): 114W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 8 x 8 Package / Case: 8-PowerTDFN	In Stock5,616
SIHH186N60EF-T1GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH EF PWR PWRPAK 8X8 Manufacturer: Vishay Siliconix Series: EF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1081pF @ 100V FET Feature: - Power Dissipation (Max): 114W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 8 x 8 Package / Case: 8-PowerTDFN	In Stock8,514
SIHH20N50E-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 22A POWERPAK8 Manufacturer: Vishay Siliconix Series: E FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 147mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2063pF @ 100V FET Feature: - Power Dissipation (Max): 174W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 8 x 8 Package / Case: 8-PowerTDFN	In Stock28,668
SIHH21N60EF-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CHAN 600V 19A POWERPAK Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 185mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2035pF @ 100V FET Feature: - Power Dissipation (Max): 174W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 8 x 8 Package / Case: 8-PowerTDFN	In Stock4,752
SIHH21N60E-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 20A POWERPAK8X8 Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 176mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2015pF @ 100V FET Feature: - Power Dissipation (Max): 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 8 x 8 Package / Case: 8-PowerTDFN	In Stock22,908
SIHH21N65EF-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 19.8A POWERPAK Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 19.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2396pF @ 100V FET Feature: - Power Dissipation (Max): 156W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 8 x 8 Package / Case: 8-PowerTDFN	In Stock27,006
SIHH21N65E-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 20.3A PWRPAK8X8 Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 20.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 99nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2404pF @ 100V FET Feature: - Power Dissipation (Max): 156W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 8 x 8 Package / Case: 8-PowerTDFN	In Stock8,028
SIHH24N65EF-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CHAN 650V 23A POWERPAK Manufacturer: Vishay Siliconix Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2780pF @ 100V FET Feature: - Power Dissipation (Max): 202W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 8 x 8 Package / Case: 8-PowerTDFN	In Stock6,498

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