SIHG70N60AEF-GE3
For Reference Only
| Part Number | SIHG70N60AEF-GE3 |
| PNEDA Part # | SIHG70N60AEF-GE3 |
| Description | MOSFET N-CH 600V 60A TO247AC |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 13,380 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SIHG70N60AEF-GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
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| Mfr. Part Number | SIHG70N60AEF-GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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SIHG70N60AEF-GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | EF |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 35A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 410nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5348pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 417W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AC |
| Package / Case | TO-247-3 |
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Manufacturer ON Semiconductor Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 553.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 0.4mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 163nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 20600pF @ 20V FET Feature - Power Dissipation (Max) 5W (Ta) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-DFNW (8.3x8.4) Package / Case 8-PowerTDFN |
