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SIHG70N60AEF-GE3

SIHG70N60AEF-GE3

For Reference Only

Part Number SIHG70N60AEF-GE3
PNEDA Part # SIHG70N60AEF-GE3
Description MOSFET N-CH 600V 60A TO247AC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 13,380
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHG70N60AEF-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHG70N60AEF-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHG70N60AEF-GE3, SIHG70N60AEF-GE3 Datasheet (Total Pages: 9, Size: 174.61 KB)
PDFSIHG70N60AEF-GE3 Datasheet Cover
SIHG70N60AEF-GE3 Datasheet Page 2 SIHG70N60AEF-GE3 Datasheet Page 3 SIHG70N60AEF-GE3 Datasheet Page 4 SIHG70N60AEF-GE3 Datasheet Page 5 SIHG70N60AEF-GE3 Datasheet Page 6 SIHG70N60AEF-GE3 Datasheet Page 7 SIHG70N60AEF-GE3 Datasheet Page 8 SIHG70N60AEF-GE3 Datasheet Page 9

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SIHG70N60AEF-GE3 Specifications

ManufacturerVishay Siliconix
SeriesEF
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs41mOhm @ 35A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs410nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5348pF @ 100V
FET Feature-
Power Dissipation (Max)417W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AC
Package / CaseTO-247-3

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