SIHG80N60E-GE3
For Reference Only
Part Number | SIHG80N60E-GE3 |
PNEDA Part # | SIHG80N60E-GE3 |
Description | MOSFET N-CH 600V 80A TO247AC |
Manufacturer | Vishay Siliconix |
Unit Price | Request a Quote |
In Stock | 10,152 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SIHG80N60E-GE3 Resources
Brand | Vishay Siliconix |
ECAD Module | |
Mfr. Part Number | SIHG80N60E-GE3 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Datasheet |
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SIHG80N60E-GE3 Specifications
Manufacturer | Vishay Siliconix |
Series | E |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 30mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 443nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 6900pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 520W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247AC |
Package / Case | TO-247-3 |
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