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SIHH180N60E-T1-GE3

SIHH180N60E-T1-GE3

For Reference Only

Part Number SIHH180N60E-T1-GE3
PNEDA Part # SIHH180N60E-T1-GE3
Description MOSFET N-CH PPAK 8X8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,616
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHH180N60E-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHH180N60E-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHH180N60E-T1-GE3, SIHH180N60E-T1-GE3 Datasheet (Total Pages: 10, Size: 178.61 KB)
PDFSIHH180N60E-T1-GE3 Datasheet Cover
SIHH180N60E-T1-GE3 Datasheet Page 2 SIHH180N60E-T1-GE3 Datasheet Page 3 SIHH180N60E-T1-GE3 Datasheet Page 4 SIHH180N60E-T1-GE3 Datasheet Page 5 SIHH180N60E-T1-GE3 Datasheet Page 6 SIHH180N60E-T1-GE3 Datasheet Page 7 SIHH180N60E-T1-GE3 Datasheet Page 8 SIHH180N60E-T1-GE3 Datasheet Page 9 SIHH180N60E-T1-GE3 Datasheet Page 10

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SIHH180N60E-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesE
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs180mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs33nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1085pF @ 100V
FET Feature-
Power Dissipation (Max)114W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 8 x 8
Package / Case8-PowerTDFN

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