Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 1738/2164

Part Number	Description	In Stock
SI5856DC-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 4.4A 1206-8 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 40mOhm @ 4.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead	In Stock6,444
SI5857DU-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 6A PPAK CHIPFET Manufacturer: Vishay Siliconix Series: LITTLE FOOT® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 58mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2.3W (Ta), 10.4W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® ChipFet Dual Package / Case: PowerPAK® ChipFET™ Dual	In Stock3,294
SI5857DU-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 6A PPAK CHIPFET Manufacturer: Vishay Siliconix Series: LITTLE FOOT® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 58mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2.3W (Ta), 10.4W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® ChipFet Dual Package / Case: PowerPAK® ChipFET™ Dual	In Stock5,832
SI5858DU-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 6A PPAK CHIPFET Manufacturer: Vishay Siliconix Series: LITTLE FOOT® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 39mOhm @ 4.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2.3W (Ta), 8.3W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® ChipFet Dual Package / Case: PowerPAK® ChipFET™ Dual	In Stock8,028
SI5858DU-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 6A PPAK CHIPFET Manufacturer: Vishay Siliconix Series: LITTLE FOOT® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 39mOhm @ 4.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2.3W (Ta), 8.3W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® ChipFet Dual Package / Case: PowerPAK® ChipFET™ Dual	In Stock5,472
SI5913DC-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 4A 1206-8 Manufacturer: Vishay Siliconix Series: LITTLE FOOT® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 84mOhm @ 3.7A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.7W (Ta), 3.1W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead	In Stock2,970
SI5913DC-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 4A 1206-8 Manufacturer: Vishay Siliconix Series: LITTLE FOOT® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 84mOhm @ 3.7A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.7W (Ta), 3.1W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead	In Stock2,232
SI6404DQ-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 8.6A 8TSSOP Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 9mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 600mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.08W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	In Stock6,336
SI6404DQ-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 8.6A 8TSSOP Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 9mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 600mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.08W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	In Stock5,994
SI6410DQ-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 7.8A 8-TSSOP Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 14mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	In Stock7,740
SI6410DQ-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 7.8A 8-TSSOP Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 14mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	In Stock2,844
SI6413DQ-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 7.2A 8TSSOP Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 10mOhm @ 8.8A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 400µA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.05W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	In Stock3,726
SI6413DQ-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 7.2A 8TSSOP Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 10mOhm @ 8.8A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 400µA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.05W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	In Stock8,820
SI6415DQ-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 6.5A 8-TSSOP Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 19mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	In Stock25,110
SI6415DQ-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 6.5A 8-TSSOP Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 19mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	In Stock24,546
SI6423DQ-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 8.2A 8-TSSOP Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 8.5mOhm @ 9.5A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 400µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.05W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	In Stock28,842
SI6423DQ-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 8.2A 8-TSSOP Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 8.5mOhm @ 9.5A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 400µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.05W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	In Stock25,620
SI6433BDQ-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 4A 8-TSSOP Manufacturer: Vishay Siliconix Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 40mOhm @ 4.8A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.05W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	In Stock4,194
SI6433BDQ-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 4A 8-TSSOP Manufacturer: Vishay Siliconix Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 40mOhm @ 4.8A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.05W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	In Stock8,082
SI6435ADQ-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 4.7A 8-TSSOP Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.05W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	In Stock5,580
SI6435ADQ-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 4.7A 8-TSSOP Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.05W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	In Stock8,244
SI6443DQ-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 7.3A 8-TSSOP Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 8.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.05W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	In Stock6,786
SI6443DQ-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 7.3A 8-TSSOP Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 8.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.05W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	In Stock2,142
SI6459BDQ-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 2.2A 8-TSSOP Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 115mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	In Stock8,172
SI6459BDQ-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 2.2A 8-TSSOP Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 115mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	In Stock3,490
SI6463BDQ-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 6.2A 8-TSSOP Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 15mOhm @ 7.4A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.05W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	In Stock4,914
SI6463BDQ-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 6.2A 8-TSSOP Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 15mOhm @ 7.4A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.05W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	In Stock4,338
SI6465DQ-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 8V 8.8A 8TSSOP Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 12mOhm @ 8.8A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	In Stock3,852
SI6465DQ-T1-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 8V 8.8A 8TSSOP Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 12mOhm @ 8.8A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	In Stock4,536
SI6466ADQ-T1-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 6.8A 8TSSOP Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 14mOhm @ 8.1A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 1.05W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	In Stock4,086

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