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SI6459BDQ-T1-E3

SI6459BDQ-T1-E3

For Reference Only

Part Number SI6459BDQ-T1-E3
PNEDA Part # SI6459BDQ-T1-E3
Description MOSFET P-CH 60V 2.2A 8-TSSOP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,172
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI6459BDQ-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI6459BDQ-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI6459BDQ-T1-E3, SI6459BDQ-T1-E3 Datasheet (Total Pages: 6, Size: 89.81 KB)
PDFSI6459BDQ-T1-GE3 Datasheet Cover
SI6459BDQ-T1-GE3 Datasheet Page 2 SI6459BDQ-T1-GE3 Datasheet Page 3 SI6459BDQ-T1-GE3 Datasheet Page 4 SI6459BDQ-T1-GE3 Datasheet Page 5 SI6459BDQ-T1-GE3 Datasheet Page 6

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SI6459BDQ-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs115mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs22nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-TSSOP
Package / Case8-TSSOP (0.173", 4.40mm Width)

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