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SI6465DQ-T1-E3

SI6465DQ-T1-E3

For Reference Only

Part Number SI6465DQ-T1-E3
PNEDA Part # SI6465DQ-T1-E3
Description MOSFET P-CH 8V 8.8A 8TSSOP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,852
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI6465DQ-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI6465DQ-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI6465DQ-T1-E3, SI6465DQ-T1-E3 Datasheet (Total Pages: 5, Size: 79.45 KB)
PDFSI6465DQ-T1-GE3 Datasheet Cover
SI6465DQ-T1-GE3 Datasheet Page 2 SI6465DQ-T1-GE3 Datasheet Page 3 SI6465DQ-T1-GE3 Datasheet Page 4 SI6465DQ-T1-GE3 Datasheet Page 5

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SI6465DQ-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)8V
Current - Continuous Drain (Id) @ 25°C8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs12mOhm @ 8.8A, 4.5V
Vgs(th) (Max) @ Id450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs80nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)1.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-TSSOP
Package / Case8-TSSOP (0.173", 4.40mm Width)

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