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SI6415DQ-T1-E3

SI6415DQ-T1-E3

For Reference Only

Part Number SI6415DQ-T1-E3
PNEDA Part # SI6415DQ-T1-E3
Description MOSFET P-CH 30V 6.5A 8-TSSOP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 25,110
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 5 - Apr 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI6415DQ-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI6415DQ-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI6415DQ-T1-E3, SI6415DQ-T1-E3 Datasheet (Total Pages: 10, Size: 200.73 KB)
PDFSI6415DQ-T1-GE3 Datasheet Cover
SI6415DQ-T1-GE3 Datasheet Page 2 SI6415DQ-T1-GE3 Datasheet Page 3 SI6415DQ-T1-GE3 Datasheet Page 4 SI6415DQ-T1-GE3 Datasheet Page 5 SI6415DQ-T1-GE3 Datasheet Page 6 SI6415DQ-T1-GE3 Datasheet Page 7 SI6415DQ-T1-GE3 Datasheet Page 8 SI6415DQ-T1-GE3 Datasheet Page 9 SI6415DQ-T1-GE3 Datasheet Page 10

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SI6415DQ-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs19mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs70nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)1.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-TSSOP
Package / Case8-TSSOP (0.173", 4.40mm Width)

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

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