Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 1639/2164

Part Number	Description	In Stock
NVMFS6H852NWFT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 5DFN Manufacturer: ON Semiconductor Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock4,428
NVMFS6H858NT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 8DFN Manufacturer: ON Semiconductor Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock2,124
NVMFS6H858NWFT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 5DFN Manufacturer: ON Semiconductor Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock4,734
NVMFS6H864NT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single T8 80V SO8FL Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 40V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 33W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	In Stock2,790
NVMFS6H864NWFT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 5DFN Manufacturer: ON Semiconductor Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock8,874
NVMFSW6D1N08HT1G ON Semiconductor	Transistors - FETs, MOSFETs - Single T8 80V 1 PART PROLIFERATI Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 89A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 120µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2085pF @ 40V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 104W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	In Stock4,140
NVMJS0D9N04CLTWG ON Semiconductor	Transistors - FETs, MOSFETs - Single T6 40V LL LFPAK Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 0.82mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 190µA Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8862pF @ 25V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-LFPAK Package / Case: 8-PowerSMD, Gull Wing	In Stock8,064
NVMJS1D0N04CTWG ON Semiconductor	Transistors - FETs, MOSFETs - Single TRENCH 6 40V SL NFET Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.5V @ 190µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 166W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-LFPAK Package / Case: 8-PowerSMD, Gull Wing	In Stock5,760
NVMJS1D2N04CLTWG ON Semiconductor	Transistors - FETs, MOSFETs - Single T6 40V LL LFPAK Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 170µA Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 128W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-LFPAK Package / Case: 8-PowerSMD, Gull Wing	In Stock2,340
NVMJS1D3N04CTWG ON Semiconductor	Transistors - FETs, MOSFETs - Single TRENCH 6 40V SL NFET Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.5V @ 170µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 128W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-LFPAK Package / Case: 8-PowerSMD, Gull Wing	In Stock7,074
NVMJS1D5N04CLTWG ON Semiconductor	Transistors - FETs, MOSFETs - Single FET NCH 40V 185A Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-LFPAK Package / Case: SOT-1205, 8-LFPAK56	In Stock7,164
NVMJS1D6N06CLTWG ON Semiconductor	Transistors - FETs, MOSFETs - Single T6 60V LL LFPAK Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 250A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.36mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6660pF @ 25V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-LFPAK Package / Case: 8-PowerSMD, Gull Wing	In Stock6,930
NVMJS1D7N04CTWG ON Semiconductor	Transistors - FETs, MOSFETs - Single TRENCH 6 40V SL NFET Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.5V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 106W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-LFPAK Package / Case: 8-PowerSMD, Gull Wing	In Stock7,794
NVMJS2D5N06CLTWG ON Semiconductor	Transistors - FETs, MOSFETs - Single FET NCH 60V 155A Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 164A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 135µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 113W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-LFPAK Package / Case: SOT-1205, 8-LFPAK56	In Stock4,176
NVMS10P02R2G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 10A 8SOIC Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock2,088
NVMS4816NR2G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 9A 8-SOIC Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 10mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 4.5V Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock4,572
NVMS5P02R2G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 5.4A 8SOIC Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.95A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 16V FET Feature: - Power Dissipation (Max): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock3,562
NVMSD6N303R2G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 6A 8SOIC Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 24V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock6,642
NVMTS001N06CLTXG ON Semiconductor	Transistors - FETs, MOSFETs - Single T6 60V LL PQFN8*8 EXPANSI Manufacturer: ON Semiconductor Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock8,658
NVMTS001N06CTXG ON Semiconductor	Transistors - FETs, MOSFETs - Single T6 60V SG PQFN8*8 EXPANSI Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 53.7A (Ta), 376A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 910mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8705pF @ 30V FET Feature: - Power Dissipation (Max): 5W (Ta), 244W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFNW (8.3x8.4) Package / Case: 8-PowerTDFN	In Stock6,246
NVMTS0D4N04CLTXG ON Semiconductor	Transistors - FETs, MOSFETs - Single AFSM T6 40V LL NCH Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 553.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 163nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 20600pF @ 20V FET Feature: - Power Dissipation (Max): 5W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFNW (8.3x8.4) Package / Case: 8-PowerTDFN	In Stock3,978
NVMTS0D4N04CTXG ON Semiconductor	Transistors - FETs, MOSFETs - Single AFSM T6 40V SG NCH Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 79.8A (Ta), 558A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 251nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 16500pF @ 20V FET Feature: - Power Dissipation (Max): 5W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFNW (8.3x8.4) Package / Case: 8-PowerTDFN	In Stock7,488
NVMTS0D6N04CLTXG ON Semiconductor	Transistors - FETs, MOSFETs - Single T6 40V LL PQFN8*8 EXPANSI Manufacturer: ON Semiconductor Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock2,646
NVMTS0D6N04CTXG ON Semiconductor	Transistors - FETs, MOSFETs - Single T6 40V SG PQFN8*8 EXPANSI Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 533A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 0.48mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 11800pF @ 20V FET Feature: - Power Dissipation (Max): 5W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFNW (8.3x8.4) Package / Case: 8-PowerTDFN	In Stock8,460
NVMTS0D7N04CLTXG ON Semiconductor	Transistors - FETs, MOSFETs - Single AFSM T6 40V LL NCH Manufacturer: ON Semiconductor Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-DFNW (8.3x8.4) Package / Case: 8-PowerTDFN	In Stock2,286
NVMTS0D7N04CTXG ON Semiconductor	Transistors - FETs, MOSFETs - Single AFSM T6 40V SG NCH Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 430A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 0.67mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 9281pF @ 25V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 273W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFNW (8.3x8.4) Package / Case: 8-PowerTDFN	In Stock5,094
NVMTS0D7N06CLTXG ON Semiconductor	Transistors - FETs, MOSFETs - Single AFSM T6 60V LL NCH Manufacturer: ON Semiconductor Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-DFNW (8.3x8.4) Package / Case: 8-PowerTDFN	In Stock2,592
NVMTS0D7N06CTXG ON Semiconductor	Transistors - FETs, MOSFETs - Single AFSM T6 60V SG NCH Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 60.5A (Ta), 464A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 0.72mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 11535pF @ 30V FET Feature: - Power Dissipation (Max): 5W (Ta), 294.6W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFNW (8.3x8.4) Package / Case: 8-PowerTDFN	In Stock4,968
NVMYS010N04CLTWG ON Semiconductor	Transistors - FETs, MOSFETs - Single FET NCH 40V 38A Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 10.3mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 28W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-LFPAK Package / Case: SOT-1023, 4-LFPAK	In Stock3,384
NVMYS011N04CTWG ON Semiconductor	Transistors - FETs, MOSFETs - Single FET NCH 40V 35A Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 28W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-LFPAK Package / Case: SOT-1023, 4-LFPAK	In Stock8,028

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