Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
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Transistors - Bipolar (BJT) - Single (13,715)
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Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
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Records 64,903

Page 1548/2164

Part Number	Description	In Stock
IXTR40P50P IXYS	Transistors - FETs, MOSFETs - Single MOSFET P-CH 500V 22A ISOPLUS247 Manufacturer: IXYS Series: PolarP™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 260mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 205nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 11500pF @ 25V FET Feature: - Power Dissipation (Max): 312W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247™ Package / Case: ISOPLUS247™	In Stock6,390
IXTR48P20P IXYS	Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 30A ISOPLUS247 Manufacturer: IXYS Series: PolarP™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 93mOhm @ 24A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V FET Feature: - Power Dissipation (Max): 190W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247™ Package / Case: ISOPLUS247™	In Stock8,406
IXTR62N15P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH ISOPLUS-247 Manufacturer: IXYS Series: PolarHT™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 31A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V FET Feature: - Power Dissipation (Max): 150W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247™ Package / Case: ISOPLUS247™	In Stock5,814
IXTR90P10P IXYS	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 57A ISOPLUS247 Manufacturer: IXYS Series: PolarP™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 27mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V FET Feature: - Power Dissipation (Max): 190W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247™ Package / Case: ISOPLUS247™	In Stock8,982
IXTR90P20P IXYS	Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 53A ISOPLUS247 Manufacturer: IXYS Series: PolarP™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 48mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 205nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V FET Feature: - Power Dissipation (Max): 312W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247™ Package / Case: ISOPLUS247™	In Stock5,562
IXTT02N450HV IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 4500V 0.2A TO268 Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 4500V Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 750Ohm @ 10mA, 10V Vgs(th) (Max) @ Id: 6.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 25V FET Feature: - Power Dissipation (Max): 113W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	In Stock19,608
IXTT100N25P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 100A TO-268 Manufacturer: IXYS Series: PolarHT™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6300pF @ 25V FET Feature: - Power Dissipation (Max): 600W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	In Stock4,176
IXTT10N100D IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 10A TO-268 Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 400W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	In Stock3,582
IXTT10N100D2 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 10A TO-267 Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 200nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5320pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 695W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	In Stock2,124
IXTT10P50 IXYS	Transistors - FETs, MOSFETs - Single MOSFET P-CH 500V 10A TO-268 Manufacturer: IXYS Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 900mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	In Stock6,570
IXTT10P60 IXYS	Transistors - FETs, MOSFETs - Single MOSFET P-CH 600V 10A TO-268 Manufacturer: IXYS Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	In Stock7,686
IXTT110N10L2 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 110A TO-268 Manufacturer: IXYS Series: Linear L2™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 18mOhm @ 55A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V FET Feature: - Power Dissipation (Max): 600W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	In Stock7,002
IXTT110N10P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 110A TO-268 Manufacturer: IXYS Series: PolarHT™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 25V FET Feature: - Power Dissipation (Max): 480W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	In Stock6,156
IXTT11P50 IXYS	Transistors - FETs, MOSFETs - Single MOSFET P-CH 500V 11A TO-268 Manufacturer: IXYS Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	In Stock2,952
IXTT120N15P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 120A TO-268 Manufacturer: IXYS Series: PolarHT™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 16mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 25V FET Feature: - Power Dissipation (Max): 600W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	In Stock4,248
IXTT12N140 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1400V 12A TO268 Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1400V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2Ohm @ 6A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 25V FET Feature: - Power Dissipation (Max): 890W (Tc) Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	In Stock5,562
IXTT12N150 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1500V 12A TO-268 Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2Ohm @ 6A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 25V FET Feature: - Power Dissipation (Max): 890W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	In Stock5,238
IXTT12N150HV IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1.5KV 12A TO268 Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 25V FET Feature: - Power Dissipation (Max): 890W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	In Stock2,862
IXTT140N10P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 140A TO-268 Manufacturer: IXYS Series: PolarHT™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Rds On (Max) @ Id, Vgs: 11mOhm @ 70A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V FET Feature: - Power Dissipation (Max): 600W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	In Stock8,046
IXTT140P10T IXYS	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 140A TO-268 Manufacturer: IXYS Series: TrenchP™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 70A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 400nC @ 10V Vgs (Max): ±15V Input Capacitance (Ciss) (Max) @ Vds: 31400pF @ 25V FET Feature: - Power Dissipation (Max): 568W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	In Stock3,888
IXTT16N10D2 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 16A TO-268 Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 0V Rds On (Max) @ Id, Vgs: 64mOhm @ 8A, 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 225nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 830W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	In Stock5,454
IXTT16N20D2 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 16A TO-268 Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 73mOhm @ 8A, 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 208nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 695W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	In Stock7,416
IXTT16N50D2 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 16A TO-268 Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 0V Rds On (Max) @ Id, Vgs: 240mOhm @ 8A, 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 199nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5250pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 695W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	In Stock7,074
IXTT16P20 IXYS	Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 16A TO-268 Manufacturer: IXYS Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	In Stock7,938
IXTT16P60P IXYS	Transistors - FETs, MOSFETs - Single MOSFET P-CH 600V 16A TO-268 Manufacturer: IXYS Series: PolarP™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 720mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5120pF @ 25V FET Feature: - Power Dissipation (Max): 460W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	In Stock6,768
IXTT170N10P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 170A TO-268 Manufacturer: IXYS Series: Polar™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 198nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V FET Feature: - Power Dissipation (Max): 715W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	In Stock5,976
IXTT1N100 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 1.5A TO-268 Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 11Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 4.5V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V FET Feature: - Power Dissipation (Max): 60W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	In Stock7,938
IXTT1N250HV IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 2500V 1.5A TO-268HV Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 2500V Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 40Ohm @ 750mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 25V FET Feature: - Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	In Stock6,732
IXTT1N300P3HV IXYS	Transistors - FETs, MOSFETs - Single 2000V TO 3000V POLAR3 POWER MOSF Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 3000V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 50Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30.6nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 895pF @ 25V FET Feature: - Power Dissipation (Max): 195W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	In Stock8,298
IXTT1N450HV IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 4500V 1A TO268 Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 4500V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 85Ohm @ 50mA, 10V Vgs(th) (Max) @ Id: 6.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 25V FET Feature: - Power Dissipation (Max): 520W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	In Stock160

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