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IXTT10N100D2

IXTT10N100D2

For Reference Only

Part Number IXTT10N100D2
PNEDA Part # IXTT10N100D2
Description MOSFET N-CH 1000V 10A TO-267
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,124
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTT10N100D2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTT10N100D2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTT10N100D2, IXTT10N100D2 Datasheet (Total Pages: 5, Size: 159.42 KB)
PDFIXTT10N100D2 Datasheet Cover
IXTT10N100D2 Datasheet Page 2 IXTT10N100D2 Datasheet Page 3 IXTT10N100D2 Datasheet Page 4 IXTT10N100D2 Datasheet Page 5

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IXTT10N100D2 Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.5Ohm @ 5A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs200nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5320pF @ 25V
FET FeatureDepletion Mode
Power Dissipation (Max)695W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-268
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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