Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXTR90P10P

IXTR90P10P

For Reference Only

Part Number IXTR90P10P
PNEDA Part # IXTR90P10P
Description MOSFET P-CH 100V 57A ISOPLUS247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,982
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 19 - Feb 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTR90P10P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTR90P10P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTR90P10P, IXTR90P10P Datasheet (Total Pages: 5, Size: 149.9 KB)
PDFIXTR90P10P Datasheet Cover
IXTR90P10P Datasheet Page 2 IXTR90P10P Datasheet Page 3 IXTR90P10P Datasheet Page 4 IXTR90P10P Datasheet Page 5

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXTR90P10P Datasheet
  • where to find IXTR90P10P
  • IXYS

  • IXYS IXTR90P10P
  • IXTR90P10P PDF Datasheet
  • IXTR90P10P Stock

  • IXTR90P10P Pinout
  • Datasheet IXTR90P10P
  • IXTR90P10P Supplier

  • IXYS Distributor
  • IXTR90P10P Price
  • IXTR90P10P Distributor

IXTR90P10P Specifications

ManufacturerIXYS
SeriesPolarP™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C57A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs27mOhm @ 45A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs120nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5800pF @ 25V
FET Feature-
Power Dissipation (Max)190W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageISOPLUS247™
Package / CaseISOPLUS247™

The Products You May Be Interested In

DKI03062

Sanken

Manufacturer

Sanken

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

48A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.5mOhm @ 31A, 10V

Vgs(th) (Max) @ Id

2.5V @ 350µA

Gate Charge (Qg) (Max) @ Vgs

24.6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1480pF @ 15V

FET Feature

-

Power Dissipation (Max)

37W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRL520NSPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

180mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

440pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 48W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

BSP170PL6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

1.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

300mOhm @ 1.9A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

410pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT223-4

Package / Case

TO-261-4, TO-261AA

RD3H080SPFRATL

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

Automotive, AEC-Q101

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

45V

Current - Continuous Drain (Id) @ 25°C

8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

91mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

9nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1000pF @ 10V

FET Feature

-

Power Dissipation (Max)

15W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

AUIRF7669L2TR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

19A (Ta), 114A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.4mOhm @ 68A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

120nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5660pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.3W (Ta), 100W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET L8

Package / Case

DirectFET™ Isometric L8

Recently Sold

MAX1680ESA

MAX1680ESA

Maxim Integrated

IC REG CHARGE PUMP INV 8SOIC

SI4214DDY-T1-GE3

SI4214DDY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 8.5A 8-SOIC

ATA6625C-GAQW

ATA6625C-GAQW

Microchip Technology

IC TRANSCEIVER 1/1 8SO

LTC4303IMS8#TRPBF

LTC4303IMS8#TRPBF

Linear Technology/Analog Devices

IC ACCELERATOR I2C HOTSWAP 8MSOP

PIC16F1705-I/P

PIC16F1705-I/P

Microchip Technology

IC MCU 8BIT 14KB FLASH 14DIP

MPSA70RLRMG

MPSA70RLRMG

ON Semiconductor

TRANS PNP 40V 0.1A TO-92

MC33174DR2G

MC33174DR2G

ON Semiconductor

IC OPAMP GP 4 CIRCUIT 14SOIC

IS66WVE4M16EALL-70BLI

IS66WVE4M16EALL-70BLI

ISSI, Integrated Silicon Solution Inc

IC PSRAM 64M PARALLEL 48TFBGA

ADG3308BRUZ

ADG3308BRUZ

Analog Devices

IC TRNSLTR BIDIRECTIONAL 20TSSOP

EP1C20F324C7

EP1C20F324C7

Intel

IC FPGA 233 I/O 324FBGA

6TPE330MIL

6TPE330MIL

Panasonic Electronic Components

CAP TANT POLY 330UF 6.3V 2917

1SMB5925BT3G

1SMB5925BT3G

ON Semiconductor

DIODE ZENER 10V 3W SMB