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IXTT10P60

IXTT10P60

For Reference Only

Part Number IXTT10P60
PNEDA Part # IXTT10P60
Description MOSFET P-CH 600V 10A TO-268
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,686
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTT10P60 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTT10P60
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTT10P60, IXTT10P60 Datasheet (Total Pages: 5, Size: 128.88 KB)
PDFIXTT10P60 Datasheet Cover
IXTT10P60 Datasheet Page 2 IXTT10P60 Datasheet Page 3 IXTT10P60 Datasheet Page 4 IXTT10P60 Datasheet Page 5

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IXTT10P60 Specifications

ManufacturerIXYS
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1Ohm @ 5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs160nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4700pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-268
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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