Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 1485/2164

Part Number	Description	In Stock
IXFA7N100P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 7A D2PAK Manufacturer: IXYS Series: HiPerFET™, PolarP2™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V Vgs(th) (Max) @ Id: 6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2590pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXFA) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock5,652
IXFA7N60P3 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 7A TO-263AA Manufacturer: IXYS Series: HiPerFET™, Polar3™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.15Ohm @ 3.5A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13.3nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 25V FET Feature: - Power Dissipation (Max): 180W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXFA) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock6,660
IXFA7N80P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 7A TO-263 Manufacturer: IXYS Series: HiPerFET™, PolarHT™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.44Ohm @ 3.5A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 25V FET Feature: - Power Dissipation (Max): 200W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXFA) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock6,120
IXFA80N25X3 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 80A TO263AA Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5430pF @ 25V FET Feature: - Power Dissipation (Max): 390W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock8,874
IXFA8N50P3 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 8A TO-263AA Manufacturer: IXYS Series: HiPerFET™, Polar3™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 25V FET Feature: - Power Dissipation (Max): 180W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXFA) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock6,192
IXFA8N85XHV IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 850V 8A TO263HV Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 654pF @ 25V FET Feature: - Power Dissipation (Max): 200W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263HV Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock2,232
IXFA90N20X3 IXYS	Transistors - FETs, MOSFETs - Single 200V/90A ULTRA JUNCTION X3-CLASS Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5420pF @ 25V FET Feature: - Power Dissipation (Max): 390W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock7,092
IXFB100N50P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 100A PLUS264 Manufacturer: IXYS Series: HiPerFET™, PolarHT™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V FET Feature: - Power Dissipation (Max): 1890W (Tc) Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: PLUS264™ Package / Case: TO-264-3, TO-264AA	In Stock8,658
IXFB100N50Q3 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 100A PLUS264 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 49mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 6.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 13800pF @ 25V FET Feature: - Power Dissipation (Max): 1560W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264™ Package / Case: TO-264-3, TO-264AA	In Stock7,704
IXFB110N60P3 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 110A PLUS264 Manufacturer: IXYS Series: HiPerFET™, Polar3™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 56mOhm @ 55A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 245nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 25V FET Feature: - Power Dissipation (Max): 1890W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264™ Package / Case: TO-264-3, TO-264AA	In Stock8,028
IXFB120N50P2 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 120A PLUS264 Manufacturer: IXYS Series: HiPerFET™, PolarHV™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 43mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V FET Feature: - Power Dissipation (Max): 1890W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264™ Package / Case: TO-264-3, TO-264AA	In Stock5,112
IXFB132N50P3 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 132A PLUS264 Manufacturer: IXYS Series: HiPerFET™, Polar3™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 132A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 39mOhm @ 66A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 18600pF @ 25V FET Feature: - Power Dissipation (Max): 1890W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264™ Package / Case: TO-264-3, TO-264AA	In Stock6,372
IXFB150N65X2 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 150A PLUS264 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 17mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 430nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 25V FET Feature: - Power Dissipation (Max): 1560W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264™ Package / Case: TO-264-3, TO-264AA	In Stock4,824
IXFB170N30P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO-264 Manufacturer: IXYS Series: HiPerFET™, PolarP2™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 18mOhm @ 85A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 258nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V FET Feature: - Power Dissipation (Max): 1250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264™ Package / Case: TO-264-3, TO-264AA	In Stock4,320
IXFB210N20P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 210A PLUS264 Manufacturer: IXYS Series: HiPerFET™, PolarP2™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 210A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 10.5mOhm @ 105A, 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 18600pF @ 25V FET Feature: - Power Dissipation (Max): 1500W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264™ Package / Case: TO-264-3, TO-264AA	In Stock6,876
IXFB210N30P3 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V 210A PLUS264 Manufacturer: IXYS Series: HiPerFET™, Polar3™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 210A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 14.5mOhm @ 105A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 268nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 16200pF @ 25V FET Feature: - Power Dissipation (Max): 1890W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PLUS264™ Package / Case: TO-264-3, TO-264AA	In Stock5,526
IXFB300N10P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 300A PLUS264 Manufacturer: IXYS Series: HiPerFET™, PolarP2™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 279nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V FET Feature: - Power Dissipation (Max): 1500W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264™ Package / Case: TO-264-3, TO-264AA	In Stock7,002
IXFB30N120P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 30A PLUS264 Manufacturer: IXYS Series: HiPerFET™, PolarP2™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 22500pF @ 25V FET Feature: - Power Dissipation (Max): 1250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264™ Package / Case: TO-264-3, TO-264AA	In Stock4,914
IXFB30N120Q2 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 30A PLUS264 Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: ISOPLUS264™ Package / Case: ISOPLUS264™	In Stock2,412
IXFB38N100Q2 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 38A PLUS264 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 250mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V FET Feature: - Power Dissipation (Max): 890W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264™ Package / Case: TO-264-3, TO-264AA	In Stock8,190
IXFB40N110P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1100V 40A PLUS264 Manufacturer: IXYS Series: HiPerFET™, PolarP2™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1100V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 260mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V FET Feature: - Power Dissipation (Max): 1250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264™ Package / Case: TO-264-3, TO-264AA	In Stock2,898
IXFB40N110Q3 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1100V 40A PLUS264 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1100V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 260mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 6.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V FET Feature: - Power Dissipation (Max): 1560W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264™ Package / Case: TO-264-3, TO-264AA	In Stock7,920
IXFB44N100P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 44A PLUS264 Manufacturer: IXYS Series: HiPerFET™, PolarP2™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 220mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V FET Feature: - Power Dissipation (Max): 1250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264™ Package / Case: TO-264-3, TO-264AA	In Stock3,312
IXFB44N100Q3 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 44A PLUS264 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 220mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 6.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 264nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V FET Feature: - Power Dissipation (Max): 1560W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264™ Package / Case: TO-264-3, TO-264AA	In Stock2,844
IXFB50N80Q2 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 50A PLUS264 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V FET Feature: - Power Dissipation (Max): 1135W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264™ Package / Case: TO-264-3, TO-264AA	In Stock6,210
IXFB52N90P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO-264 Manufacturer: IXYS Series: HiPerFET™, PolarP2™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 160mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 308nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V FET Feature: - Power Dissipation (Max): 1250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264™ Package / Case: TO-264-3, TO-264AA	In Stock4,194
IXFB60N80P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 60A PLUS264 Manufacturer: IXYS Series: HiPerFET™, PolarHT™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 140mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 25V FET Feature: - Power Dissipation (Max): 1250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264™ Package / Case: TO-264-3, TO-264AA	In Stock7,956
IXFB62N80Q3 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 62A PLUS264 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 140mOhm @ 31A, 10V Vgs(th) (Max) @ Id: 6.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V FET Feature: - Power Dissipation (Max): 1560W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264™ Package / Case: TO-264-3, TO-264AA	In Stock7,002
IXFB70N100X IXYS	Transistors - FETs, MOSFETs - Single MOSFET 1KV 70A ULTRA JCT PLUS247 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 89mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 6V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 9160pF @ 25V FET Feature: - Power Dissipation (Max): 1785W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264™ Package / Case: TO-264-3, TO-264AA	In Stock2,610
IXFB70N60Q2 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 70A PLUS264 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 88mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 265nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V FET Feature: - Power Dissipation (Max): 890W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS264™ Package / Case: TO-264-3, TO-264AA	In Stock44

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