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IXFB110N60P3

IXFB110N60P3

For Reference Only

Part Number IXFB110N60P3
PNEDA Part # IXFB110N60P3
Description MOSFET N-CH 600V 110A PLUS264
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,028
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFB110N60P3 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFB110N60P3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFB110N60P3, IXFB110N60P3 Datasheet (Total Pages: 5, Size: 136.53 KB)
PDFIXFB110N60P3 Datasheet Cover
IXFB110N60P3 Datasheet Page 2 IXFB110N60P3 Datasheet Page 3 IXFB110N60P3 Datasheet Page 4 IXFB110N60P3 Datasheet Page 5

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IXFB110N60P3 Specifications

ManufacturerIXYS
SeriesHiPerFET™, Polar3™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs56mOhm @ 55A, 10V
Vgs(th) (Max) @ Id5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs245nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds18000pF @ 25V
FET Feature-
Power Dissipation (Max)1890W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePLUS264™
Package / CaseTO-264-3, TO-264AA

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