Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXFB100N50Q3

IXFB100N50Q3

For Reference Only

Part Number IXFB100N50Q3
PNEDA Part # IXFB100N50Q3
Description MOSFET N-CH 500V 100A PLUS264
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,704
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 30 - Apr 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFB100N50Q3 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFB100N50Q3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFB100N50Q3, IXFB100N50Q3 Datasheet (Total Pages: 5, Size: 143.64 KB)
PDFIXFB100N50Q3 Datasheet Cover
IXFB100N50Q3 Datasheet Page 2 IXFB100N50Q3 Datasheet Page 3 IXFB100N50Q3 Datasheet Page 4 IXFB100N50Q3 Datasheet Page 5

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXFB100N50Q3 Datasheet
  • where to find IXFB100N50Q3
  • IXYS

  • IXYS IXFB100N50Q3
  • IXFB100N50Q3 PDF Datasheet
  • IXFB100N50Q3 Stock

  • IXFB100N50Q3 Pinout
  • Datasheet IXFB100N50Q3
  • IXFB100N50Q3 Supplier

  • IXYS Distributor
  • IXFB100N50Q3 Price
  • IXFB100N50Q3 Distributor

IXFB100N50Q3 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs49mOhm @ 50A, 10V
Vgs(th) (Max) @ Id6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs255nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds13800pF @ 25V
FET Feature-
Power Dissipation (Max)1560W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePLUS264™
Package / CaseTO-264-3, TO-264AA

The Products You May Be Interested In

GP1M005A050HS

Global Power Technologies Group

Manufacturer

Global Power Technologies Group

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.85Ohm @ 2A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

602pF @ 25V

FET Feature

-

Power Dissipation (Max)

92.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

IPB180N04S4L01ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

Automotive, AEC-Q101, OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

180A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.2mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

2.2V @ 140µA

Gate Charge (Qg) (Max) @ Vgs

245nC @ 10V

Vgs (Max)

+20V, -16V

Input Capacitance (Ciss) (Max) @ Vds

19100pF @ 25V

FET Feature

-

Power Dissipation (Max)

188W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-7-3

Package / Case

TO-263-7, D²Pak (6 Leads + Tab)

PSMN020-30MLCX

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

31.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

18.1mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

1.95V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

9.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

430pF @ 15V

FET Feature

-

Power Dissipation (Max)

33W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK33

Package / Case

SOT-1210, 8-LFPAK33

SI4833ADY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

LITTLE FOOT®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

4.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

72mOhm @ 3.6A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

750pF @ 15V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

1.93W (Ta), 2.75W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

IXFT20N80P

IXYS

Manufacturer

IXYS

Series

HiPerFET™, PolarHT™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

520mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

86nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

4685pF @ 25V

FET Feature

-

Power Dissipation (Max)

500W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-268

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Recently Sold

IRFR5305PBF

IRFR5305PBF

Infineon Technologies

MOSFET P-CH 55V 31A DPAK

KSZ9031RNXIA

KSZ9031RNXIA

Microchip Technology

IC TRANSCEIVER FULL 4/4 48QFN

ALS70A273NT250

ALS70A273NT250

KEMET

CAP ALUM 27000UF 20% 250V SCREW

BTS723GWXUMA1

BTS723GWXUMA1

Infineon Technologies

IC PWR SW 2CH 58V HISIDE PDSO14

EMC1001-AFZQ-TR

EMC1001-AFZQ-TR

Microchip Technology

SENSOR DIGITAL -25C-125C SOT6

ADV7125WBSTZ170

ADV7125WBSTZ170

Analog Devices

IC DAC 8BIT A-OUT 48LQFP

LTC2855IDE

LTC2855IDE

Linear Technology/Analog Devices

IC TRANSCEIVER FULL 1/1 12DFN

C3M0065090D

C3M0065090D

Cree/Wolfspeed

MOSFET N-CH 900V 36A TO247-3

PIC18F2550-I/SO

PIC18F2550-I/SO

Microchip Technology

IC MCU 8BIT 32KB FLASH 28SOIC

CNY75B

CNY75B

Vishay Semiconductor Opto Division

OPTOISO 5KV TRANS W/BASE 6DIP

0251002.NRT1L

0251002.NRT1L

Littelfuse

FUSE BRD MNT 2A 125VAC/VDC AXIAL

SMBJ33CA-13-F

SMBJ33CA-13-F

Diodes Incorporated

TVS DIODE 33V 53.3V SMB