Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
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Transistors - Bipolar (BJT) - Single (13,715)
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Transistors - FETs, MOSFETs - Arrays (3,829)
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Records 64,903

Page 1484/2164

Part Number	Description	In Stock
IXFA22N65X2 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 22A TO-263 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 5.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2310pF @ 25V FET Feature: - Power Dissipation (Max): 390W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock7,080
IXFA230N075T2 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 230A TO-263AA Manufacturer: IXYS Series: HiPerFET™, TrenchT2™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 230A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V FET Feature: - Power Dissipation (Max): 480W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXFA) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock5,562
IXFA230N075T2-7 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 230A TO-263-7 Manufacturer: IXYS Series: GigaMOS™, HiPerFET™, TrenchT2™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 230A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V FET Feature: - Power Dissipation (Max): 480W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 (IXTA..7) Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB	In Stock5,274
IXFA24N60X IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 24A TO-263 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 175mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 4.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 25V FET Feature: - Power Dissipation (Max): 400W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock2,016
IXFA26N30X3 IXYS	Transistors - FETs, MOSFETs - Single 300V/26A ULTRA JUNCTION X3-CLASS Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 66mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 4.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1.465nF @ 25V FET Feature: - Power Dissipation (Max): 170W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock4,608
IXFA26N50P3 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 26A TO-263AA Manufacturer: IXYS Series: HiPerFET™, Polar3™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 25V FET Feature: - Power Dissipation (Max): 500W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXFA) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock2,520
IXFA270N06T3 IXYS	Transistors - FETs, MOSFETs - Single 60V/270A TRENCHT3 HIPERFET MOSFE Manufacturer: IXYS Series: HiperFET™, TrenchT3™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 270A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 12600pF @ 25V FET Feature: - Power Dissipation (Max): 480W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock7,056
IXFA30N25X3 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 250V 30A TO263 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V FET Feature: - Power Dissipation (Max): 176W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock8,802
IXFA30N60X IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 30A TO-263 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 25V FET Feature: - Power Dissipation (Max): 500W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock8,838
IXFA34N65X2 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 34A TO-263 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 105mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3330pF @ 25V FET Feature: - Power Dissipation (Max): 540W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock4,032
IXFA36N20X3 IXYS	Transistors - FETs, MOSFETs - Single 200V/36A ULTRA JUNCTION X3-CLASS Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 4.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1425pF @ 25V FET Feature: - Power Dissipation (Max): 176W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock6,072
IXFA36N30P3 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V 36A TO-263AA Manufacturer: IXYS Series: HiPerFET™, Polar3™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 25V FET Feature: - Power Dissipation (Max): 347W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock8,766
IXFA38N30X3 IXYS	Transistors - FETs, MOSFETs - Single FET N-CHANNEL Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 50mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2240pF @ 25V FET Feature: - Power Dissipation (Max): 240W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock7,380
IXFA3N120 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 3A TO-263 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V FET Feature: - Power Dissipation (Max): 200W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXFA) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock4,356
IXFA3N120-TRL IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 3A TO-263 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V FET Feature: - Power Dissipation (Max): 200W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock5,544
IXFA3N80 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 3.6A TO-263 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 685pF @ 25V FET Feature: - Power Dissipation (Max): 100W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXFA) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock8,478
IXFA4N100P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 4A D2PAK Manufacturer: IXYS Series: HiPerFET™, PolarP2™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1456pF @ 25V FET Feature: - Power Dissipation (Max): 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXFA) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock8,316
IXFA4N100Q IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 4A TO-263 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V FET Feature: - Power Dissipation (Max): 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXFA) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock7,728
IXFA4N100Q-TRL IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 4A TO-263 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V FET Feature: - Power Dissipation (Max): 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXFA) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock5,508
IXFA4N60P3 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 4A TO-263AA Manufacturer: IXYS Series: HiPerFET™, Polar3™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.2Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 25V FET Feature: - Power Dissipation (Max): 114W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXFA) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock8,262
IXFA4N85X IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 850V 3.5A TO263 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 850V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 247pF @ 25V FET Feature: - Power Dissipation (Max): 150W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXFA) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock4,896
IXFA56N30X3 IXYS	Transistors - FETs, MOSFETs - Single 300V/56A ULTRA JUNCTION X3-CLASS Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 27mOhm @ 28A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3.75nF @ 25V FET Feature: - Power Dissipation (Max): 320W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock6,324
IXFA5N100P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 5A TO-263 Manufacturer: IXYS Series: HiPerFET™, PolarP2™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33.4nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1830pF @ 25V FET Feature: - Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXFA) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock6,912
IXFA5N50P3 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 5A TO-263AA Manufacturer: IXYS Series: HiPerFET™, Polar3™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.65Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V FET Feature: - Power Dissipation (Max): 114W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXFA) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock5,436
IXFA60N25X3 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 60A TO263AA Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3610pF @ 25V FET Feature: - Power Dissipation (Max): 320W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock8,766
IXFA6N120P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 6A D2PAK Manufacturer: IXYS Series: HiPerFET™, PolarP2™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2830pF @ 25V FET Feature: - Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXFA) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock7,344
IXFA6N120P-TRL IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 6A D2PAK Manufacturer: IXYS Series: HiPerFET™, PolarP2™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2830pF @ 25V FET Feature: - Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXFA) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock8,514
IXFA72N20X3 IXYS	Transistors - FETs, MOSFETs - Single 200V/72A ULTRA JUNCTION X3-CLASS Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 20mOhm @ 36A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3780pF @ 25V FET Feature: - Power Dissipation (Max): 320W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock7,974
IXFA72N30X3 IXYS	Transistors - FETs, MOSFETs - Single 300V/72A ULTRA JUNCTION X3-CLASS Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 19mOhm @ 36A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5.4nF @ 25V FET Feature: - Power Dissipation (Max): 390W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock4,032
IXFA76N15T2 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 76A TO263 Manufacturer: IXYS Series: HiPerFET™, TrenchT2™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 20mOhm @ 38A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V FET Feature: - Power Dissipation (Max): 350W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock6,840

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