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IXFA4N100P

IXFA4N100P

For Reference Only

Part Number IXFA4N100P
PNEDA Part # IXFA4N100P
Description MOSFET N-CH 1000V 4A D2PAK
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,316
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFA4N100P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFA4N100P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IXFA4N100P Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarP2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs26nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1456pF @ 25V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (IXFA)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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