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IXFA4N100Q

IXFA4N100Q

For Reference Only

Part Number IXFA4N100Q
PNEDA Part # IXFA4N100Q
Description MOSFET N-CH 1000V 4A TO-263
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,728
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFA4N100Q Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFA4N100Q
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFA4N100Q, IXFA4N100Q Datasheet (Total Pages: 4, Size: 143.5 KB)
PDFIXFA4N100Q-TRL Datasheet Cover
IXFA4N100Q-TRL Datasheet Page 2 IXFA4N100Q-TRL Datasheet Page 3 IXFA4N100Q-TRL Datasheet Page 4

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IXFA4N100Q Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs39nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1050pF @ 25V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (IXFA)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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