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Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

Transistors

Records 64,903
Page 139/2164
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Part Number
Description
In Stock
Quantity
MS2502W
MS2502W

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
In Stock8,460
MS2506
MS2506

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
In Stock5,580
MS2552
MS2552

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 1.15GHZ 2NLFL

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 6.7dB
  • Power - Max: 880W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
  • Current - Collector (Ic) (Max): 24A
  • Operating Temperature: 250°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 2NLFL
  • Supplier Device Package: 2NLFL
In Stock5,310
MS2553C
MS2553C

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 1.15GHZ M220

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10.5dB
  • Power - Max: 175W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 4A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M220
  • Supplier Device Package: M220
In Stock7,740
MS2554
MS2554

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 1.15GHZ M218

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 6.2dB
  • Power - Max: 600W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
  • Current - Collector (Ic) (Max): 17.8A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M218
  • Supplier Device Package: M218
In Stock5,436
MS2554A
MS2554A

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 1.15GHZ M216

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 6.2dB
  • Power - Max: 600W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
  • Current - Collector (Ic) (Max): 17.8A
  • Operating Temperature: 200°C
  • Mounting Type: Chassis Mount
  • Package / Case: M216
  • Supplier Device Package: M216
In Stock8,280
MS2562
MS2562

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
In Stock2,808
MS2563
MS2563

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
In Stock3,762
MS2575A
MS2575A

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
In Stock5,076
MS2586
MS2586

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
In Stock6,750
MS2587
MS2587

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
In Stock6,102
MS2588
MS2588

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
In Stock3,150
MS2608
MS2608

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
In Stock7,128
MS2870
MS2870

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
In Stock6,102
MS2874
MS2874

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
In Stock3,204
MS3455
MS3455

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
In Stock7,380
MS3456
MS3456

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
In Stock3,618
MS652S
MS652S

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 16V 512MHZ M123

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: 450MHz ~ 512MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 25W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
  • Current - Collector (Ic) (Max): 2A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M123
  • Supplier Device Package: M123
In Stock7,668
MSC1090M
MSC1090M

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS 65V 1.15GHZ M220

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.4dB
  • Power - Max: 220W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 5.52A
  • Operating Temperature: 200°C
  • Mounting Type: Chassis Mount
  • Package / Case: M220
  • Supplier Device Package: M220
In Stock7,542
MSC1175M
MSC1175M

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 1.15GHZ M218

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB
  • Power - Max: 400W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
  • Current - Collector (Ic) (Max): 12A
  • Operating Temperature: 250°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M218
  • Supplier Device Package: M218
In Stock8,874
MSC1175MA
MSC1175MA

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 1.15GHZ M218

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB
  • Power - Max: 400W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
  • Current - Collector (Ic) (Max): 12A
  • Operating Temperature: 250°C
  • Mounting Type: Chassis Mount
  • Package / Case: M218
  • Supplier Device Package: M218
In Stock7,686
MSC1350M
MSC1350M

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 1.15GHZ M218

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7dB ~ 7.1dB
  • Power - Max: 720W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
  • Current - Collector (Ic) (Max): 19.8A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M218
  • Supplier Device Package: M218
In Stock4,680
MSC1400M
MSC1400M

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 1.15GHZ M216

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 6.5dB
  • Power - Max: 1000W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
  • Current - Collector (Ic) (Max): 28A
  • Operating Temperature: 250°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M216
  • Supplier Device Package: M216
In Stock8,874
MSC1450A
MSC1450A

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS 65V M216

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 7dB
  • Power - Max: 910W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
  • Current - Collector (Ic) (Max): 28A
  • Operating Temperature: 250°C
  • Mounting Type: Chassis Mount
  • Package / Case: M216
  • Supplier Device Package: M216
In Stock4,050
MSC1450M
MSC1450M

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 1.09GHZ M216

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.09GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7dB
  • Power - Max: 910W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
  • Current - Collector (Ic) (Max): 28A
  • Operating Temperature: 250°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M216
  • Supplier Device Package: M216
In Stock4,662
MSC2295-BT1G
MSC2295-BT1G

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 20V 150MHZ SC59

  • Manufacturer: ON Semiconductor
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 150MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59
In Stock2,466
MSC2295-CT1
MSC2295-CT1

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 20V 150MHZ SC59

  • Manufacturer: ON Semiconductor
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 150MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59
In Stock2,322
MSC2295-CT1G
MSC2295-CT1G

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 20V 150MHZ SC59

  • Manufacturer: ON Semiconductor
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 150MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59
In Stock2,106
MSC3930-BT1
MSC3930-BT1

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 20V 150MHZ SC70-3

  • Manufacturer: ON Semiconductor
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 150MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70-3 (SOT323)
In Stock4,446
MSC3930-BT1G
MSC3930-BT1G

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 20V 150MHZ SC70-3

  • Manufacturer: ON Semiconductor
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 150MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70-3 (SOT323)
In Stock3,528